The DOI matches its Crossref record; 35 of the 35 references it cites were found in a registry or an index.
Chaotic carrier transport induced by impact ionization in semiconductors
Abstract
Chaotic carrier transport induced by impact ionization of neutral impurities (i.e. impurity avalanche breakdown at low temperature) in semiconductors (e.g. GaAs Ge, InSb) has been summarized. Viewed over the wide spectrum of the observations, a universality class of low-dimensional dissipative chaos is recognized in the related nonlinear carrier transport. Among various types of the current instabilities reviewed, driven chaos and crossover instability in n-GaAs have been used as examples to show typical low-dimensional chaos. High-dimensional complex behaviour of the current instability has also been discussed.
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Random charging is attributed to random carrier generation dominated by the random number of collision events during impact ionization near the drain, and accidental discharging is ascribed to random carrier escapes led by out-diffusion from the FB to the source.
“The random charging is attributed to random carrier generation dominated by the random number of collision events during impact ionization near D (37, 38), and the accidental discharging is ascribed to random carrier escapes led by out-diffusion from the FB to S.”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [38]
Citations
Cites
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Schöll, E. (1987) · Springer series in synergetics · doi:10.1007/978-3-642-71927-1 · Cited by 468
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Teitsworth, S. W., Westervelt, R. M., & Häller, E. E. (1983) · Physical Review Letters · doi:10.1103/physrevlett.51.825 · Cited by 158
Gwinn, E. G., & Westervelt, R. M. (1987) · Physical Review Letters · doi:10.1103/physrevlett.59.157 · Cited by 65
Chaotic Motions in the Electrical Avalanche Breakdown Caused by Weak Photoexcitation in n-GaAs
Aoki, K., Kobayashi, T., & Yamamoto, K. (1982) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.51.2373 · Cited by 60
Self-citationReconstruction of the spatial structure of current filaments in n-GaAs in a magnetic field
Brandl, A., Völcker, M., & Prettl, W. (1989) · Applied Physics Letters · doi:10.1063/1.101918 · Cited by 55
Oscillations and Chaotic Current Fluctuations in n -GaAs
Brandl, A., Geisel, T., & Prettl, W. (1987) · Europhysics Letters (EPL) · doi:10.1209/0295-5075/3/4/003 · Cited by 50
Yamamoto, K., Yamamoto, H., & Taniuchi, T. (1991) · Applied Physics Letters · doi:10.1063/1.104370 · Cited by 42
Nonlinear response and chaos in semiconductors induced by impact ionization
Aoki, K., & Yamamoto, K. (1989) · Applied Physics A · doi:10.1007/bf01141273 · Cited by 38
Self-citationNonlinear and chaotic transport phenomena in semiconductors
Abe, Y. (1989) · Applied Physics A · doi:10.1007/bf01141270 · Cited by 36
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Chaotic conductivity oscillation in n-type Si by impact-ionization in freezeout temperature range
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Observation of a Large-Scale Sheetlike Current Filament in a Thinn-GaAs Layer
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Self-citationLow-frequency oscillations and routes to chaos in semi-insulating GaAs
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Self-citationSelf-Organized Critical Behaviour in the Low-Temperature Impact Ionization Breakdown of p-Ge
Clauß, W., Kittel, A., Rau, U., et al. (1990) · Europhysics Letters (EPL) · doi:10.1209/0295-5075/12/5/008 · Cited by 19
Aoki, K., Kondo, T., & Watanabe, T. (1991) · Solid State Communications · doi:10.1016/0038-1098(91)90434-w · Cited by 19
Self-citationElectron-beam induced instability during filamentary current transport inn-GaAs
Rau, U., Aoki, K., Peinke, J., et al. (1990) · The European Physical Journal B · doi:10.1007/bf01454212 · Cited by 19
Self-citationAoki, K., & Mugibayashi, N. (1989) · Applied Physics A · doi:10.1007/bf01141279 · Cited by 16
Self-citationHüpper, G., Schöll, E., & Reggiani, L. (1989) · Solid-State Electronics · doi:10.1016/0038-1101(89)90313-4 · Cited by 15
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Self-citationNonlinear oscillations and chaotic behavior due to impact lonization of shallow donors in InSb
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Aoki, K. (1991) · Solid State Communications · doi:10.1016/0038-1098(91)90433-v · Cited by 14
Self-citationCurrent filaments and nonlinear oscillations in n-GaAs
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Chaotic Behavior of a Driven Current Filament Observed in High-Purity n-GaAs at 4.2 K
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Self-citationChaotic behavior of hot electron plasma in Ni-compensated Ge
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Teitsworth, S. W., & Westervelt, R. M. (1986) · Physica D Nonlinear Phenomena · doi:10.1016/0167-2789(86)90126-0 · Cited by 3
Yano, H., Goto, N., & Ohno, Y. (1992) · Semiconductor Science and Technology · doi:10.1088/0268-1242/7/3b/128 · Cited by 2
Flagged first, then by citations
Research works printed but not linked: 2
- Röhricht B, 1985, Physica, 134, 281
- Schöll E, 1985, Physica, 134, 271
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Sorted by citations
Cryptographic transistor for true random number generator with low power consumption
Kim, S.-I., You, H.-J., Kim, M.-S., An, U.-S., Kim, M.-S., Lee, D. H., Ryu, S.-T., & Choi, Y.-K. (2024) · Science Advances · doi:10.1126/sciadv.adk6042 · Cited by 33
“The random charging is attributed to random carrier generation dominated by the random number of collision events during impact ionization near D ( 37 , 38 ), and the accidental discharging is ascribed to random carrier escapes led by out-diffusion from the FB to S.”
Metadata
- Authors
- Aoki, K.
- Affiliations
- Kobe University (JP)
- Corresponding author
- Aoki, K
- ORCID
- Aoki, K
- Venue
- Semiconductor Science and Technology
- Publisher
- IOP Publishing
- Published
- 1992-03-01
- Volume
- 7
- Issue
- 3B
- Pages
- B474-B479
- ISSN
- 0268-1242 (ISSN-L)
- 1361-6641
- OpenAlex
- W2080038164
- Cited by
- 8
- References
- 35
- Citations by year
- 2026: 1 · 2025: 1 · 2024: 1
- FWCI
- 1.12
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Semiconductor Science and Technology (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Statistical and Nonlinear Physics › Chaos control and synchronization
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Physical Sciences › Physics and Astronomy › Statistical and Nonlinear Physics › Quantum chaos and dynamical systems
- Keywords
- impact ionization, current instability, n-GaAs, indium antimonide, Ge, universality class
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