Electronic conduction in : the dependence on the oxygen stoichiometry
Abstract
We report a systematic study of the electronic transport properties of the metallic perovskite oxide as a function of the oxygen stoichiometry . The electrical resistivity, magnetoresistance, susceptibility, Hall effect and thermopower have been studied. All of the transport coefficients are dependent on the value of . The resistivity increases almost exponentially as increases. We relate this increase in to the creation of with square-planar coordination. We find that there is a distinct -contribution to the resistivity over the whole temperature range. The thermopower is negative, as expected for systems with electrons as the carrier, but the Hall coefficient is positive. We have given a qualitative and quantitative explanation for the different quantities observed and their systematic variation with the stoichiometry .
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LNO in stoichiometric composition demonstrates metallic conductivity, with holes as the dominant charge carriers, although Ni has a formal valence of 3+.
“It is known that LNO in stoichiometric composition demonstrates metallic conductivity (the dominant charge carriers contributing to transport in LaNiO3 are holes), although Ni has a formal valence of 3+ [59].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [59]
Oxygen deficiency in LaNiO3-δ leads to the creation of Ni2+ ions, significantly affecting conductivity.
“Oxygen deficiency in LaNiO3-δ leads to the creation of Ni2+ ions, significantly affecting the conductivity [59,86].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [59]
Oxygen deficiency is the reason for resistivity increase attributed to change in nickel valence.
“As it is known, oxygen deficiency is the reason for the resistivity increase attributed to the change in nickel valence [19,20,21,59].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [59]
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Control of Columnar Grain Microstructure in CSD LaNiO3 Films
Atanova, A. V., Seregin, D. S., Zhigalina, O. M., Khmelenin, D. N., Orlov, G. A., Turkina, D. I., Sigov, A. S., & Vorotilov, K. A. (2023) · Molecules · doi:10.3390/molecules28041938 · Cited by 5 · see citing works
- Authors
- Gayathri, N., Raychaudhuri, A. K., Xu, X. Q., Peng, J. L., & Greene, R. L.
- Affiliations
- Indian Institute of Science Bangalore (IN)
- University of Maryland, College Park (US)
- Venue
- Journal of Physics: Condensed Matter
- Publisher
- IOP Publishing
- Published
- 1998-02-16
- Volume
- 10
- Issue
- 6
- Pages
- 1323-1338
- ISSN
- 0953-8984 (ISSN-L)
- 1361-648X
- OpenAlex
- W2025416477
- Cited by
- 95
- References
- 0
- Citations by year
- 2025: 2 · 2024: 1 · 2023: 5 · 2022: 4 · 2021: 4 · 2020: 4 · 2019: 7 · 2018: 4 · 2017: 7 · 2016: 7 · 2015: 7 · 2014: 4 · 2013: 4 · 2012: 7
- FWCI
- 0.56
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Physics Condensed Matter (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
- Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Physics of Superconductivity and Magnetism
- Keywords
- electronic conduction, oxygen stoichiometry, perovskite oxides, electrical resistivity, magnetoresistance, magnetic susceptibility, Hall effect, Seebeck coefficient, square-planar coordination, charge carriers, metal oxides
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