The DOI matches its Crossref record; 126 of the 126 references it cites were found in a registry or an index.
Strain engineering in semiconducting two-dimensional crystals
Open accessAbstract
One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS2, WS2, MoSe2 and WSe2). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc, is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed.
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Cites
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Cited by
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
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Strain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe2
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Metadata
- Authors
- Roldán, R., Castellanos-Gomez, A., Cappelluti, E., & Guinea, F.
- Venue
- Journal of Physics: Condensed Matter
- Publisher
- IOP Publishing
- Published
- 2015-07-22
- Volume
- 27
- Issue
- 31
- Pages
- 313201
- ISSN
- 0953-8984 (ISSN-L)
- 1361-648X
- OpenAlex
- W2128414648
- Cited by
- 527
- References
- 126
- FWCI
- 15.59
- Type
- journal article
- Language
- en
- Open access
- bronze
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