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Review of inductively coupled plasmas for plasma processing

Hopwood, J·1992·Plasma Sources Science and Technology

Abstract

The need for large-area, high-density plasma sources for plasma-aided manufacturing of integrated circuits has created a renewed interest in inductively coupled plasmas (ICPs). Several ICP reactor geometries are briefly reviewed. Typically, inductive coupling of RF power (0.5-28 MHz) can produce ion densities in excess of 10 12 cm -3 even at submillitorr pressures. Existing electromagnetic field models of ICPs are examined and found to be in reasonable agreement with experimental results. Sputter deposition, anodic silicon oxidation and polymer etching using ICPs are also described. It is concluded that ICPs are promising candidates for meeting the future requirements of plasma processing, although considerable process development, plasma characterization and modelling are still needed.

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Metadata

Authors
Hopwood, J.
Venue
Plasma Sources Science and Technology
Published
1992-05-01
Volume
1
Issue
2
Pages
109-116
ISSN
  • 0963-0252 (ISSN-L)
  • 1361-6595
OpenAlex
W2008225124
Cited by
690
References
0
FWCI
18.19
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Review of inductively coupled plasmas for plasma processing. https://app.cochat.ai/papers/10.1088/0963-0252/1/2/006
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Hopwood, J. (1992). Review of inductively coupled plasmas for plasma processing. Plasma Sources Science and Technology. https://doi.org/10.1088/0963-0252/1/2/006

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.