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Cited by 69Ferroelectric and Negative Capacitance DevicesFerroelectric and Piezoelectric MaterialsMultiferroics and related materials

Fluorite-structure antiferroelectrics

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Park, Min Hyuk, Hwang, Cheol Seong·2019·Reports on Progress in Physics
DOI 10.1088/1361-6633/ab49d6
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Abstract

Ferroelectricity in fluorite-structure oxides like hafnia and zirconia have attracted increasing interest since 2011. Two spontaneous polarizations of the fluorite-structure ferroelectrics are considered highly promising for nonvolatile memory applications, with their superior scalability and Si compatibility compared to the conventional perovskite-structure ferroelectrics. Besides, antiferroelectricity originating from a field-induced phase transition between the paraelectric and ferroelectric phases in fluorite-structure oxides is another highly interesting matter. It was suggested that the field-induced phase transition could be utilized for energy conversions between thermal and electrical energy, as well as for energy storage. The important energy-related applications of antiferroelectric fluorite-structure oxides, however, have not been systematically reviewed to date. Thus, in this work, the fluorite-structure antiferroelectrics are reviewed from their fundamentals to their applications based on pyroelectricity as well as antiferroelectricity. Another important application field of the fluorite-structure antiferroelectrics is the semiconductor memory devices. The fluorite-structure antiferroelectrics can be utilized for antiferroelectric random-access-memories, negative capacitance field-effect-transistors, and flash memories. Moreover, the recently reported morphotropic phase boundary (MPB) between the ferroelectric and antiferroelectric phases in this material system marks another significant progress in this material system, and thus, the fundamentals and applications of the MPB phase are also reviewed.

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  • The state of the art for hafnia-based AFE-like materials is closer to 60 J/cm3 and 80% efficiency at electric fields of 4500 kV/cm.

    “The state of the art for hafnia-based AFE-like materials is closer to 60 J/cm 3 and 80% efficiency at electric fields of 4500 kV/cm.28”

    From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [28]

    Table 1 (listed under §5, Conclusion; page unavailable) reports a hafnia-based film with 61.2 J/cm³ at 4500 kV/cm, but its efficiency is 65%, not 80%. A different hafnia-based film reaches 82% efficiency at 4500 kV/cm, but its energy-storage density is 53 J/cm³. The cited paper does not report the claimed combination in one material. (LLM, conf=0.93)

    Experimental — accuracy not yet measured

  • For all PHO samples, the coercive field is less than 25% of hafnia ferroelectrics.

    “For all of the samples, the coercive field is <25% of hafnia ferroelectrics.28”

    From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [28]

    The Memory applications section (page unavailable) says antiferroelectric memory can operate at a lower field than fluorite-structure ferroelectrics and reports a coercive field of about 0.7 MV/cm for antiferroelectric ZrO₂, versus 1.0–2.0 MV/cm for fluorite-structure ferroelectrics. It does not establish a coercive field below 25% of the hafnia-ferroelectric value for all PHO samples. (LLM, conf=0.78)

    Experimental — accuracy not yet measured

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Research works printed but not linked: 147

  1. Lines M E and Glass A M 2001 Principles and Applications of Ferroelectrics and Related Materials (Oxford: Oxford University Press)
  2. Scott J F 2000 Ferroelectric Memories (Berlin: Springer)
  3. Valasek J 1921 Phys. Rev. 17 475 · DOI
  4. Park M H et al 2015 Adv. Mater. 27 1811 · DOI
  5. Kittel C 1951 Phys. Rev. 82 729 · DOI
  6. Böscke T S, Müller J, Bräuhaus D, Schröder U and Böttger U 2011 Appl. Phys. Lett. 99 102903 · DOI
  7. Mikolajick T, Slesazeck S, Park M H and Schroeder U 2018 MRS Bull. 43 340 · DOI
  8. Park M H, Lee Y H, Mikolajick T, Schroeder U and Hwang C S 2018 MRS Commun. 8 795 · DOI
  9. Hoffmann M et al 2019 Nature 565 464 · DOI
  10. Kim K D et al 2019 Adv. Funct. Mater. 29 1808228 · DOI
  11. Huan T D, Sharma V, Rossetti G A Jr and Ramprasad R 2014 Phys. Rev. B 90 140103 · DOI
  12. Park M H, Kim H J, Kim Y J, Moon T, Kim K D and Hwang C S 2014 Adv. Energy Mater. 4 1400610 · DOI
  13. Park M H, Kim H J, Kim Y J, Moon T, Kim K D and Hwang C S 2015 Nano Energy 12 131 · DOI
  14. Hoffmann M et al 2015 Nano Energy 18 154 · DOI
  15. Park M H et al 2017 Nano Energy 36 381 · DOI
  16. Kim K D et al 2017 Nano Energy 39 390 · DOI
  17. Ali F et al 2017 J. Appl. Phys. 122 144105 · DOI
  18. Böscke T S et al 2011 Appl. Phys. Lett. 99 112904 · DOI
  19. Park M H et al 2016 Adv. Mater. 28 7956 · DOI
  20. Pesǐć M et al 2017 47th European Solid-State Device Research Conf. (Leuven) pp 160-3
  21. Ahart M et al 2008 Nature 451 545 · DOI
  22. Zeches R J et al 2009 Science 3326 977 · DOI
  23. Cao W and Cross L E 1993 Phys. Rev. B 47 4825 · DOI
  24. Eitel R E, Randall R A, Shrout T R, Rehrig P W, Hackenberger W and Park SE 2001 Japan. J. Appl. Phys. 40 5999 · DOI
  25. Randall C A, Kim N, Kucera JP, Cao W and Shrout T R 1998 J. Am. Ceram. Soc. 81 677 · DOI
  26. Park M H et al 2018 ACS Appl. Mater. Interfaces 10 42666 · DOI
  27. Materlik R, Künneth C and Kersch A 2015 J. Appl. Phys. 117 134109 · DOI
  28. Batra R, Huan T D, Rosseti G A Jr and Ramprasad R 2017 Chem. Mater. 29 9102 · DOI
  29. Materlik R, Künneth C, Falkowski M, Mokolajick T and Kersch A 2018 J. Appl. Phys. 123 164101 · DOI
  30. Künneth C, Materlik R, Falkowski M and Kersch A 2017 ACS Appl. Nano Mater. 1 254 · DOI
  31. Park M H et al 2017 Nanoscale 9 9973 · DOI
  32. Schroeder U et al 2014 Japan. J. Appl. Phys. 53 08LE02 · DOI
  33. Park M H et al 2017 J. Mater. Chem. C 5 4677 · DOI
  34. Kim K D et al 2016 J. Mater. Chem. C 4 6864 · DOI
  35. Batra R, Tran H D and Ramprasad R 2016 Appl. Phys. Lett. 108 172902 · DOI
  36. Park M H, Kim H J, Kim Y J, Moon T and Hwang C S 2014 Appl. Phys. Lett. 104 072901 · DOI
  37. Kim S J et al 2019 ACS Appl. Mater. Interfaces 11 5208 · DOI
  38. Kim S J et al 2018 Appl. Phys. Lett. 111 242901 · DOI
  39. Shiraishi T et al 2016 Appl. Phys. Lett. 108 262904 · DOI
  40. Hoffmann M et al 2015 J. Appl. Phys. 118 072006 · DOI
  41. Pal A, Narasimhan V K, Weeks S, Pramanik D and Chiang T 2017 Appl. Phys. Lett. 110 022903 · DOI
  42. Park M H et al 2018 Nanoscale 10 716 · DOI
  43. Lee Y H et al 2019 Adv. Electron. Mater. 5 1800436 · DOI
  44. Park M H, Lee Y H, Mikolajick T, Schroeder U and Hwang C S Adv. Electron. Mater. 1800522 (https://doi. org/10.1002/aelm.201800522) · DOI
  45. Xu L, Nishimura T, Shibayama S, Yajima T, Migita S and Toriumi A 2017 J. Appl. Phys. 122 124104 · DOI
  46. ReyesLillo S E, Garrity K F and Rabe K M 2014 Phys. Rev. B 90 140103 · DOI
  47. Müller J et al 2012 Nano Lett. 12 4318 · DOI
  48. Park M H et al 2016 Nanoscale 8 13898 · DOI
  49. Xu L, Nishimura T, Shibayama S, Yajima T, Migita S and Toriumi A 2016 Appl. Phys. Express 9 091501 · DOI
  50. Cho DY et al 2012 Chem. Mater. 18 3534 · DOI
  51. Jung HS et al 2012 ECS J. Solid State Sci. Technol. 1 N33 · DOI
  52. Park M H and Hwang C S 2019 Pyroelectric and electrocaloric effects in fluorite structure ferroelectrics and their applications Ferroelectricity in Doped Hafnium Oxide ed U Schroeder et al (Amsterdam: Elsevier) ch 5.2 (www.elsevier.com/books/ ferroelectricityindopedhafniumoxide/schroe der/9780081024300)
  53. Lee CK, Cho E, Lee HS, Hwang C S and Han S 2008 Phys. Rev. B 78 012102 · DOI
  54. Mueller S et al 2012 Adv. Funct. Mater. 22 2412 · DOI
  55. Mueller S et al 2012 ECS J. Solid State Sci. Technol. 1 N123 · DOI
  56. Schenk T et al 2013 Proc. Eur. Solid-State Device Res. Conf. p 260
  57. Schroeder U et al 2018 Inorg. Chem. 57 2752 · DOI
  58. Richter C et al 2017 Adv. Electron. Mater. 3 1700131 · DOI
  59. Starschich S, Griesche D, Schneller T, Waser R and Böttger U 2014 Appl. Phys. Lett. 104 202903 · DOI
  60. Starschich S and Boettger U 2017 J. Mater. Chem. C 5 333 · DOI
  61. Starschich S, Griesche D, Schneller T and Böttger U 2015 ECS J. Solid State Sci. Technol. 4 P419 · DOI
  62. Shimizu T et al 2016 Sci. Rep. 6 32931 · DOI
  63. Park M H et al 2018 Adv. Electron. Mater. 4 1700489 · DOI
  64. Sherrill S A, Banerjee P, Rubloff G W and Lee S B 2011 Phys. Chem. Chem. Phys. 13 20714 · DOI
  65. Haspert L C, Gillette E, Lee S B and Rubloff G W 2013 Energy Environ. Sci. 6 2578 · DOI
  66. Yao K et al 2011 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 58 1968 · DOI
  67. Starschich S, Schenk T, Schroeder U and Boettger U 2017 Appl. Phys. Lett. 110 182905 · DOI
  68. Starschich S and Böttger U 2018 J. Appl. Phys. 123 044101 · DOI
  69. Liu Z et al 2018 Adv. Mater. Technol. 3 1800111 · DOI
  70. Ciuchi I V, Mitoseriu L, Galassi C and Brennecka G L 2016 J. Am. Ceram. Soc. 99 2382 · DOI
  71. Jo H R and Lynch C S 2016 J. Appl. Phys. 119 024104 · DOI
  72. Li B et al 2017 RSC Adv. 7 43327 · DOI
  73. Liu Z et al 2017 J. Alloys Compd. 691 721 · DOI
  74. Zhang G et al 2015 J. Am. Ceram. Soc. 98 1175 · DOI
  75. Zhang L, Jiang S, Fan B and Zhang G 2015 J. Alloys Compd. 622 162 · DOI
  76. Hu Z Q, Ma B H, Koritala R E and Balachandran U 2014 Appl. Phys. Lett. 104 263902 · DOI
  77. Ma B, Kwon DK, Narayanan M and Balachandran U 2009 J. Mater. Res. 24 2993 · DOI
  78. Wang Y, Hao X, Yang J, Xu J and Zhao D 2012 J. Appl. Phys. 112 034105 · DOI
  79. Peng B, Xie Z K, Yue Z X and Li L T 2014 Appl. Phys. Lett. 105 052904 · DOI
  80. Xie Z K, Peng B, Zhang J, Zhang X H, Yue Z X and Li L T 2015 J. Am. Ceram. Soc. 98 2968 · DOI
  81. Hao X H, Zhai J W and Yao X 2009 J. Am. Ceram. Soc. 92 1133 · DOI
  82. Peng B L et al 2015 ACS Appl. Mater. Interfaces 7 13512 · DOI
  83. Tian Y et al 2016 J. Mater. Chem. A 4 17279 · DOI
  84. Zhao L, Liu Q, Gao J, Zhang S and Li J F 2017 Adv. Mater. 29 1701824 · DOI
  85. Zhao K, Gao J, Liu Q, Zhang S and Li JF 2018 ACS Appl. Mater. Interfaces 10 819 · DOI
  86. Tian Y et al 2017 J. Mater. Chem. A 5 17525 · DOI
  87. Yang H, Yan F, Lin Y, Wang T and Wang F 2017 Sci. Rep. 7 8726 · DOI
  88. Yu Z, Liu Y, Shen M, Qian H, Li F and Lyu Y 2017 Ceram. Int. 43 7653 · DOI
  89. Gao F et al 2011 J. Am. Ceram. Soc. 94 4382 · DOI
  90. Yang H et al 2017 J. Eur. Ceram. Soc. 37 3303 · DOI
  91. Pan H et al 2017 J. Mater. Chem. A 5 5920 · DOI
  92. Chen J, Tang Z, Yang B and Zhao S 2018 Appl. Phys. Lett. 113 153904 · DOI
  93. Sun Y, Zhou Y, Lu Q and Zhao S 2018 Phys. Status Solidi 12 1700364 · DOI
  94. Lomenzo P D, Chung CC, Zhou C, Jones J L and Nishida T 2017 Appl. Phys. Lett. 110 232904 · DOI · Paper page
  95. Pešić M, Hoffmann M, Richter C, Mikolajick T and Schroeder U 2016 Adv. Funct. Mater. 26 7486 · DOI
  96. Sebald G, Guyomar D and Agbossou A 2009 Smart Mater. Struct. 18 125006 · DOI
  97. Sebald G, Lefeuvre E and Guyomar D 2008 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 55 538 · DOI
  98. Sebald G, Pruvost S and Guyomar D 2008 Smart Mater. Struct. 17 015012 · DOI
  99. Lang S B 2005 Phys. Today 58 31 · DOI
  100. Holden A J 2011 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 58 1981 · DOI
  101. Whatmore R W 2004 J. Electroceram. 13 139 · DOI
  102. Mischenko A S, Zhang Q, Scott J F, Whatmore R W and Mathur N D 2006 Science 311 1270 · DOI
  103. Neese B, Chu B, Lu SG, Wang Y, Furman E and Zhang Q M 2008 Science 321 821 · DOI
  104. Lu SG and Zhang Q 2009 Adv. Mater. 21 1983 · DOI
  105. Peng B, Fan H and Zhang Q 2013 Adv. Funct. Mater. 23 2987 · DOI
  106. Kandilian R, Navid A and Pilon L 2011 Smart Mater. Struct. 20 055020 · DOI
  107. Lee F Y, Goljahi S, McKinley I M, Lynch C S and Pilon L 2012 Smart Mater. Struct. 21 025021 · DOI
  108. Navid A and Pilon L 2011 Smart Mater. Struct. 20 025012 · DOI
  109. Lee F Y, Navid A and Pilon L 2012 Appl. Therm. Eng. 37 30 · DOI
  110. Vats G, Vaish R and Bowen C R 2014 J. Appl. Phys. 115 013505 · DOI
  111. Correia T M et al 2011 J. Phys. D: Appl. Phys. 44 165407 · DOI
  112. Mishenko A S, Zhang Q, Whatmore R W, Scott J F and Marthur N D 2006 Appl. Phys. Lett. 89 242912 · DOI
  113. Chen H, Ren TL, Wu XM, Yang Y and Liu LT 2009 Appl. Phys. Lett. 94 182902 · DOI
  114. Zheng XC, Zheng GP, Lin Z and Jiang ZY 2012 Thin Solid Films 522 125 · DOI
  115. Le Goupil F, Berenov A, Axelsson AK, Valant M and McN Alford N 2012 J. Appl. Phys. 111 124109 · DOI
  116. Bai T, Zheng GP and Shi SQ 2011 Mater. Res. Bull. 46 1866 · DOI
  117. Jiang X J, Luo L H, Wang B Y, Li W P and Chen H B 2014 Ceram. Int. 40 2627 · DOI
  118. Pirc R, Rozic B, Koruz J, Malic B and Kutnjak Z 2014 Europhys. Lett. 107 17002 · DOI · Paper page
  119. Geng W et al 2015 Adv. Mater. 27 3165 · DOI
  120. Ye M et al 2016 J. Mater. Chem. C 4 3375 · DOI
  121. Vats G, Kumar A, Ortega N, Bowen C R and Katiyar R S 2016 Energy. Environ. Sci. 9 1335 · DOI
  122. Smith S W et al 2017 Appl. Phys. Lett. 110 072901 · DOI
  123. Jachalke S et al 2018 Appl. Phys. Lett. 112 142901 · DOI
  124. Mart C, Kämpfe T, Zybell S and Weinreich W 2018 Appl. Phys. Lett. 112 052905 · DOI
  125. Ploss B and Bauer S 1991 Sensors Actuators A 25-7 407 · DOI
  126. Pešić M et al 2018 IEEE J. Electron Devices Soc. 6 1019 · DOI
  127. Pešić M, Schroeder U, Slesazeck S and Mikolajick T 2018 IEEE Trans. Device Mater. Reliab. 18 154 · DOI
  128. Lee M H et al 2015 IEEE Electron. Dev. Lett. 36 294 · DOI
  129. Lee M H et al 2015 IEEE J. Electron Devices Soc. 3 377
  130. Ali T et al 2019 IEEE Trans. Electron. Dev. 66 3356 · DOI
  131. Ali T et al 2019 IEEE 11th Int. Memory Workshop (https:// doi.org/10.1109/IMW.2019.8739651) · DOI
  132. Liu X, Zhou D, Guan Y, Li S, Cao F and Dong X 2018 Acta. Mater. 154 190 · DOI
  133. Salahuddin S and Datta S 2008 Nano Lett. 8 405 · DOI
  134. Khan A I et al 2015 Nat. Mater. 14 182 · DOI
  135. Kim Y J et al 2017 Nano Lett. 17 7796 · DOI
  136. Song S J et al 2016 Sci. Rep. 6 20825 · DOI
  137. Park H W, Roh J, Lee Y B and Hwang C S 2019 Adv. Mater. (https://doi.org/10.1002/adma.201805266) · DOI
  138. Íñiguez J, Zubko P, Lukyanchuk I and Cano A 2019 Nat. Rev. Mater. 4 243 · DOI
  139. Hoffmann M et al 2016 Adv. Funct. Mater. 26 8643 · DOI
  140. Hwang C S 2015 Adv. Electron. Mater. 1 1400056 · DOI
  141. Kim S K, Lee S W, Han J H, Lee B, Han S and Hwang C S 2010 Adv. Funct. Mater. 20 2989 · DOI
  142. Kim S K and Popovici M 2018 MRS Bull. 43 334 · DOI
  143. Wei Y et al 2018 Nat. Mater. 17 1095 · DOI
  144. Ahmed A, Goldhorpe I A and Khandani A K 2015 Appl. Phys. Rev. 2 011302 · DOI
  145. Gevorgian S 2009 Ferroelectrics in Microwave Devices, Circuits and Systems (Berlin: Springer)
  146. Dragoman M, Aldrigo M, Modreanu M and Dragoman D 2017 Appl. Phys. Lett. 110 103104 · DOI · Paper page
  147. Dragoman M et al 2017 Nanotechnology 28 38LT04 · DOI

Cited by

Sorted by citations

Authors
Park, M. H., & Hwang, C. S.
Affiliations
  • Pusan National University (KR)
  • Seoul National University (KR)
Corresponding author
Hwang, Cheol Seong
ORCID
Venue
Reports on Progress in Physics
Publisher
IOP Publishing
Published
2019-11-07
Volume
82
Issue
12
Pages
124502
ISSN
  • 0034-4885 (ISSN-L)
  • 1361-6633
DOI
10.1088/1361-6633/ab49d6
OpenAlex
W2979007005
Cited by
69
References
0
Citations by year
2026: 3 · 2025: 11 · 2024: 9 · 2023: 9 · 2022: 13 · 2021: 14 · 2020: 9 · 2019: 1
FWCI
3.32
Type
journal article
Language
en
Open access
Licence
Locations
  • Reports on Progress in Physics (publishedVersion, cc-by)
  • PubMed (publishedVersion)
Funders
  • National Research Foundation of Korea (2013M3A6B1078874)
  • Samsung Science & Technology Foundation (SRFC-TA1703-02)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
Keywords
antiferroelectrics, hafnium oxide, zirconia, field-induced phase transition, pyroelectric effect, non-volatile memory, negative capacitance field-effect transistors, flash memory, morphotropic phase boundary, energy conversion, energy storage, ferroelectricity

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