The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Ultrafast charge transfer in MoS 2 /WSe 2 p–n Heterojunction
Open accessAbstract
Abstract Atomically thin and sharp van der Waals heterojunction can be created by vertically stacking p-type monolayer tungsten diselenide (WSe 2 ) onto n-type molybdenum disulfide (MoS 2 ). Theory predicts that stacked MoS 2 and WSe 2 monolayer forms type II p–n junction, creating a built-in electric field across the interface which facilitates electron–hole separation and transfer. Gaining insights into the dynamics of charge transfer across van der Waals heterostructure is central to understanding light-photocurrent conversion at these ultrathin interfaces. Herein, we investigate the exciton dissociation and charge transfer in a MoS 2 /WSe 2 van der Waals hetero-structure. Our results show that ultrafast electron transfer from WSe 2 to MoS 2 take place within 470 fs upon optical excitation with 99% charge transfer efficiency, leading to drastic photoluminescence quenching and decreased lifetime. Our findings suggest that van der Waals heterostructure may be useful as active components in ultrafast optoelectronic devices.
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Cites
Synthesis of MoS 2 and MoSe 2 Films with Vertically Aligned Layers
Kong, D., Wang, H., Cha, J. J., Pasta, M., Koski, K. J., Yao, J., & Cui, Y. (2013) · Nano Letters · doi:10.1021/nl400258t · Cited by 2,250
High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide
Zheng, J., Zhang, H., Dong, S., Liu, Y., Tai Nai, C., Suk Shin, H., Young Jeong, H., Liu, B., & Ping Loh, K. (2014) · Nature Communications · doi:10.1038/ncomms3995 · Cited by 787
Self-citation
Cited by
Li, C., Cao, Q., Wang, F., Xiao, Y., Li, Y., Delaunay, J.-J., & Zhu, H. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00067k · Cited by 494
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures
Cheng, J., Wang, C., Zou, X., & Liao, L. (2019) · Advanced Optical Materials · doi:10.1002/adom.201800441 · Cited by 359
Joseph, S., Mohan, J., Lakshmy, S., Thomas, S., Chakraborty, B., Thomas, S., & Kalarikkal, N. (2023) · Materials Chemistry and Physics · doi:10.1016/j.matchemphys.2023.127332 · Cited by 284
Imaging Ultrafast Charge Transfer at Low-Dimensional Lead Halide Perovskite Heterostructures
Faini, F., Asensio, Y., Visentin, F., Olano-Vegas, L., Hörmann, M., Hueso, L. E., Cerullo, G., Camargo, F. V. A., Martín-García, B., & Grancini, G. (2025) · ACS Energy Letters · doi:10.1021/acsenergylett.4c02786 · Cited by 12
Metadata
- Authors
- Peng, B., Yu, G., Liu, X., Liu, B., Liang, X., Bi, L., Deng, L., Sum, T. C., & Loh, K. P.
- Venue
- 2D Materials
- Publisher
- IOP Publishing
- Published
- 2016-05-05
- Volume
- 3
- Issue
- 2
- Pages
- 025020
- ISSN
- 2053-1583 (ISSN-L)
- OpenAlex
- W2346149434
- Cited by
- 219
- References
- 2
- FWCI
- 12.66
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Peng, B., Yu, G., Liu, X., Liu, B., Liang, X., Bi, L., Deng, L., Sum, T. C., & Loh, K. P. (2016). Ultrafast charge transfer in MoS 2 /WSe 2 p–n Heterojunction. 2D Materials. https://doi.org/10.1088/2053-1583/3/2/025020
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