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Ultrafast charge transfer in MoS 2 /WSe 2 p–n Heterojunction

Open access
Peng, Bo, Yu, Guannan, Liu, Xinfeng, Liu, Bo, Liang, Xiao, Bi, Lei, Deng, Longjiang, Sum, Tze Chien, Loh, Kian Ping·2016·2D Materials

Abstract

Abstract Atomically thin and sharp van der Waals heterojunction can be created by vertically stacking p-type monolayer tungsten diselenide (WSe 2 ) onto n-type molybdenum disulfide (MoS 2 ). Theory predicts that stacked MoS 2 and WSe 2 monolayer forms type II p–n junction, creating a built-in electric field across the interface which facilitates electron–hole separation and transfer. Gaining insights into the dynamics of charge transfer across van der Waals heterostructure is central to understanding light-photocurrent conversion at these ultrathin interfaces. Herein, we investigate the exciton dissociation and charge transfer in a MoS 2 /WSe 2 van der Waals hetero-structure. Our results show that ultrafast electron transfer from WSe 2 to MoS 2 take place within 470 fs upon optical excitation with 99% charge transfer efficiency, leading to drastic photoluminescence quenching and decreased lifetime. Our findings suggest that van der Waals heterostructure may be useful as active components in ultrafast optoelectronic devices.

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Metadata

Authors
Peng, B., Yu, G., Liu, X., Liu, B., Liang, X., Bi, L., Deng, L., Sum, T. C., & Loh, K. P.
Venue
2D Materials
Published
2016-05-05
Volume
3
Issue
2
Pages
025020
ISSN
2053-1583 (ISSN-L)
OpenAlex
W2346149434
Cited by
219
References
2
FWCI
12.66
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Ultrafast charge transfer in MoS 2 /WSe 2 p–n Heterojunction. https://app.cochat.ai/papers/10.1088/2053-1583/3/2/025020
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Peng, B., Yu, G., Liu, X., Liu, B., Liang, X., Bi, L., Deng, L., Sum, T. C., & Loh, K. P. (2016). Ultrafast charge transfer in MoS 2 /WSe 2 p–n Heterojunction. 2D Materials. https://doi.org/10.1088/2053-1583/3/2/025020

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