Student or educator? Sign up with your school email and get 6 months of Pro free.
Cited by 236

The DOI matches its Crossref record.

Dispersion of the Index of Refraction Near the Absorption Edge of Semiconductors

Stern, Frank·1964·Physical Review

Abstract

A simple method is used to calculate the contribution of the rapid rise in optical absorption near the absorption edge of semiconductors to the index of refraction near the edge. Other contributions to the index are also estimated. The results give qualitative agreement with the results obtained for PbS by Riedl and Schoolar, and very good agreement with Marple's prism measurements of the index for GaAs. Some applications to injection lasers are discussed. The temperature and pressure dependence of the index of refraction near the absorption edge is estimated, and agrees well with experimental results for GaAs.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1103/physrev.133.a1653

Cites

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cited by

See all 236

Metadata

Authors
Stern, F.
Venue
Physical Review
Published
1964-03-16
Volume
133
Issue
6A
Pages
A1653-A1664
ISSN
0031-899X (ISSN-L)
OpenAlex
W2083122756
Cited by
236
References
0
FWCI
10.79
Type
journal article
Language
en
Open access
closed

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Dispersion of the Index of Refraction Near the Absorption Edge of Semiconductors. https://app.cochat.ai/papers/10.1103/physrev.133.a1653
The paper
Stern, F. (1964). Dispersion of the Index of Refraction Near the Absorption Edge of Semiconductors. Physical Review. https://doi.org/10.1103/physrev.133.a1653

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.