The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
Space-Charge Effects on Electron Tunneling
Abstract
The one-electron (Bethe-Sommerfeld) model of electron tunneling is formulated to describe tunneling when the curvature (electron mass) and centroid of the one-electron constant-energy surfaces vary across the junction. The conductance for an abrupt GaAs $p\ensuremath{-}n$ tunnel diode is calculated and shown to exhibit minima near zero bias for highly asymmetrical doping ratios. The conductance of metal-oxide-semimetal (M-O-SM) tunnel junctions is evaluated both with and without the inclusion of space-charge effects and of surface states. All calculations are performed using solvable models for which the WKBJ approximation is not imposed. Neither the removal of the WKBJ approximation nor the space-charge effects give rise to maxima in the conductance of the M-O-SM junctions near a band edge.
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Citations
Cites
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Cited by
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Theory of semiconductor superlattice electronic structure
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Depolarization fields in thin ferroelectric films
Mehta, R. R., Silverman, B. D., & Jacobs, J. T. (1973) · Journal of Applied Physics · doi:10.1063/1.1662770 · Cited by 522
Electronic states in semiconductor heterostructures
Bastard, G., & Brum, J. (1986) · IEEE Journal of Quantum Electronics · doi:10.1109/jqe.1986.1073186 · Cited by 451
Confined many-electron systems
Jaskólski, W. (1996) · Physics Reports · doi:10.1016/0370-1573(95)00070-4 · Cited by 391
Metadata
- Authors
- BenDaniel, D. J., & Duke, C. B.
- Venue
- Physical Review
- Publisher
- American Physical Society (APS)
- Published
- 1966-12-09
- Volume
- 152
- Issue
- 2
- Pages
- 683-692
- ISSN
- 0031-899X (ISSN-L)
- OpenAlex
- W2004470758
- Cited by
- 914
- References
- 16
- FWCI
- 5.40
- Type
- journal article
- Language
- en
- Open access
- closed
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