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Piezoresistance Effect in Germanium and Silicon
Abstract
Uniaxial tension causes a change of resistivity in silicon and germanium of both $n$ and $p$ types. The complete tensor piezoresistance has been determined experimentally for these materials and expressed in terms of the pressure coefficient of resistivity and two simple shear coefficients. One of the shear coefficients for each of the materials is exceptionally large and cannot be explained in terms of previously known mechanisms. A possible microscopic mechanism proposed by C. Herring which could account for one large shear constant is discussed. This so called electron transfer effect arises in the structure of the energy bands of these semiconductors, and piezoresistance may therefore give important direct experimental information about this structure.
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Citations
Cited by
Giant piezoresistance effect in silicon nanowires
He, R., & Yang, P. (2006) · Nature Nanotechnology · doi:10.1038/nnano.2006.53 · Cited by 722
Material approaches to stretchable strain sensors
Park, J., You, I., Shin, S., & Jeong, U. (2015) · ChemPhysChem · doi:10.1002/cphc.201402810 · Cited by 216
Fiber/Yarn and Textile-Based Piezoresistive Pressure Sensors
Yang, Y., Liu, Y., & Yin, R. (2025) · Advanced Fiber Materials · doi:10.1007/s42765-024-00479-5 · Cited by 110
Organic Thin Film Transistors in Mechanical Sensors
Lamport, Z. A., Cavallari, M. R., Kam, K. A., McGinn, C. K., Yu, C., & Kymissis, I. (2020) · Advanced Functional Materials · doi:10.1002/adfm.202004700 · Cited by 40
Metadata
- Authors
- Smith, C. S.
- Venue
- Physical Review
- Publisher
- American Physical Society (APS)
- Published
- 1954-04-01
- Volume
- 94
- Issue
- 1
- Pages
- 42-49
- ISSN
- 0031-899X (ISSN-L)
- OpenAlex
- W2002257666
- Cited by
- 2,036
- References
- 0
- FWCI
- 12.30
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Piezoresistance Effect in Germanium and Silicon. https://app.cochat.ai/papers/10.1103/physrev.94.42
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- Smith, C. S. (1954). Piezoresistance Effect in Germanium and Silicon. Physical Review. https://doi.org/10.1103/physrev.94.42
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