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Atomic densities of states near Si (111) surfaces
Abstract
The semiempirical tight-binding method is used to construct accurate valence bands for bulk Si and Ge using Hamiltonian parameters through second neighbors. One additional parameter is used to describe surface relaxation (back-bond contraction). The density of surface bands and resonances associated with atomic layers near the surface is calculated. Surprisingly, the resonances are found to contribute to the surface density of states almost as effectively as proper surface states. Comparison with ion-neutralization, electron-energy loss, and ultraviolet photoemission data is made.
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Citations
Cited by
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
A Semi-empirical tight-binding theory of the electronic structure of semiconductors†
Vogl, P., Hjalmarson, H. P., & Dow, J. D. (1983) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(83)90064-1 · Cited by 1,444
Metadata
- Authors
- Pandey, K. C., & Phillips, J. C.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1976-01-15
- Volume
- 13
- Issue
- 2
- Pages
- 750-760
- ISSN
- 0556-2805 (ISSN-L)
- OpenAlex
- W2055694017
- Cited by
- 232
- References
- 0
- FWCI
- 16.12
- Type
- journal article
- Language
- en
- Open access
- closed
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- Pandey, K. C., & Phillips, J. C. (1976). Atomic densities of states near Si (111) surfaces. Physical Review B. https://doi.org/10.1103/physrevb.13.750
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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