The DOI matches its Crossref record; 17 of the 17 references it cites were found in a registry or an index.
Spin-orbit splitting in crystalline and compositionally disordered semiconductors
Abstract
The electronic structures of C, Si, Ge, $\ensuremath{\alpha}\ensuremath{-}\mathrm{Sn}$, GaP, GaAs, GaSb, InP, InAs, InSb, and ZnSe are studied using a tight-binding approach which includes spin-orbit interactions. The spin-orbit splittings ${\mathrm{\ensuremath{\Delta}}}_{0}$ and ${\mathrm{\ensuremath{\Delta}}}_{1}$ are related to atomic spin-orbit splittings and optical gaps. The variation of ${\mathrm{\ensuremath{\Delta}}}_{0}$ as a function of chemical composition is studied for a number of alloy systems. It is shown that the nonlinear dependence of ${\mathrm{\ensuremath{\Delta}}}_{0}$ on alloy composition is a disorder-induced effect. The bowing parameter is calculated in terms of tight-binding parameters and band gaps.
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Cites
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Cited by
Liu, C.-C., Jiang, H., & Yao, Y. (2011) · Physical Review B · doi:10.1103/physrevb.84.195430 · Cited by 1,367
Tight-binding modelling of materials
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Theory of semiconductor superlattice electronic structure
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Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
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Metadata
- Authors
- Chadi, D. J.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1977-07-15
- Volume
- 16
- Issue
- 2
- Pages
- 790-796
- ISSN
- 0556-2805 (ISSN-L)
- OpenAlex
- W2069145717
- Cited by
- 559
- References
- 17
- FWCI
- 7.42
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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