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Cited by 370

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Electron Mobility in Direct-Gap Polar Semiconductors

Rode, D. L.·1970·Physical Review B

Abstract

The electron drift mobilities of the five direct-gap III-V semiconductors GaAs, GaSb, InP, InAs, and InSb are presented as a function of temperature. Polar-mode, deformation-potential acoustic, and piezoelectric scattering are included, as well as nonparabolic conduction bands and the corresponding electron wave functions. The drift mobility follows exactly from the assumed model by a simple iterative technique of solution which retains all the advantages of variational techniques without, however, the need for excessive mathematical detail. Piezoelectric scattering is shown to be considerable in GaAs for temperatures below 100 \ifmmode^\circ\else\textdegree\fi{}K. The agreement between theory and experiment for GaAs is satisfactory.

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Metadata

Authors
Rode, D. L.
Venue
Physical Review B
Published
1970-08-15
Volume
2
Issue
4
Pages
1012-1024
ISSN
0556-2805 (ISSN-L)
OpenAlex
W2035733312
Cited by
370
References
1
FWCI
10.76
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Electron Mobility in Direct-Gap Polar Semiconductors. https://app.cochat.ai/papers/10.1103/physrevb.2.1012
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Rode, D. L. (1970). Electron Mobility in Direct-Gap Polar Semiconductors. Physical Review B. https://doi.org/10.1103/physrevb.2.1012

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