CoChat
Sign Up
Cited by 181Terahertz technology and applicationsLaser-Matter Interactions and ApplicationsSuperconducting and THz Device Technology

Terahertz radiation from InAs induced by carrier diffusion and drift

Liu, Kai, Xu, Jingzhou, Yuan, Tao, Zhang, X.-C.·2006·Physical Review B
DOI 10.1103/physrevb.73.155330
Open this paper in CoChat — free account

Abstract

Terahertz (THz) radiation from a (100) oriented InAs surfaces is dominated by the photo-Dember effect. The strength of the radiation is influenced by screening the radiation with doped carriers. When irradiated by femtosecond pulses, the wafer with the lowest doping concentration radiates THz power nearly two orders higher than the wafer with highest doping concentration. With identical optical excitation and same doping concentration, a $p$-type InAs generates stronger THz waves than an $n$-type InAs due to the weaker screening effect. The low doping $p$-type InAs ($1\ifmmode\times\else\texttimes\fi{}{10}^{16}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$) sample is the strongest THz wave emitter among all the unbiased semiconductors we have ever tested with a Ti:sapphire laser oscillator. The drift-diffusion equation (DDE) is used in the study of carrier drift and diffusion as well as subsequent THz radiation from InAs wafers. The calculation explains well the experimental observation of the relationship between a THz electric field and the doping properties of InAs. The physical pictures of the carrier drift and diffusion characteristics in InAs surfaces are also clearly provided in this report.

Integrity signals

Registry

Crossref · 10.1103/physrevb.73.155330

Cites

23 of 23 references verified0 citation errors · 0 not checkable

Statistics

Recomputing p-values needs the paper’s full text.

Claims the paper makes

This paper’s full text isn’t openly available, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

  • In longitudinal photo-Dember THz emitters such as InAs crystals, excited electrons near the crystal surface diffuse more quickly into the bulk than holes, creating currents normal to the surface.

    “In longitudinal photo-Dember THz emitters such as InAs crystals32,33, excited electrons near the crystal surface diffuse more quickly into the bulk than the corresponding holes, creating currents in the direction normal to the surface (i.e., out-of-plane electric dipole).”

    From Ultrafast terahertz emission from emerging symmetry-broken materials (2023) · cites this paper as [33]

Cites

Flagged first, then by citations

Cited by

Sorted by citations

Related

Authors
Liu, K., Xu, J., Yuan, T., & Zhang, X.-C.
Affiliations
Rensselaer Polytechnic Institute (US)
ORCID
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
2006-04-26
Volume
73
Issue
15
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
DOI
10.1103/physrevb.73.155330
OpenAlex
W1973733018
Cited by
181
References
23
Citations by year
2026: 4 · 2025: 6 · 2024: 7 · 2023: 7 · 2022: 8 · 2021: 2 · 2020: 5 · 2019: 6 · 2018: 6 · 2017: 11 · 2016: 17 · 2015: 11 · 2014: 10 · 2013: 9 · 2012: 9
FWCI
11.80
Type
journal article
Language
en
Open access
closed
Licence
link.aps.org/licenses/aps-default-license (vor)
Locations
Physical Review B (publishedVersion)
Funders
  • National Science Foundation
  • Army Research Office
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Laser-Matter Interactions and Applications
  • Physical Sciences › Physics and Astronomy › Astronomy and Astrophysics › Superconducting and THz Device Technology
Keywords
terahertz radiation, InAs, photo-Dember effect, doping concentration, p-type semiconductors, n-type semiconductors, femtosecond laser excitation, carrier screening, drift-diffusion equations

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review