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Cited by 263

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Large low-temperature Hall effect and resistivity in mixed-valent SmB6

Allen, J. W., Batlogg, B., Wachter, P.·1979·Physical Review B

Abstract

The Hall coefficient ${R}_{H}$ has been measured between 2 and 300 K for small crystals of Sm${\mathrm{B}}_{6}$ in which the resistivity $\ensuremath{\rho}$ at 4 K is nearly ${10}^{4}$ times greater than its 300-K value of 290 \ensuremath{\mu}\ensuremath{\Omega} cm. Significant differences from previous results reported for samples with a much smaller low-temperature resistivity rise have been found. It is shown that the size of the resistivity increase precludes its being ascribed to a scattering mechanism for a metallic number of carriers, and that the size of ${R}_{H}$ implies numbers of holes and electrons less than \ensuremath{\sim}5 \ifmmode\times\else\texttimes\fi{} ${10}^{17}$/${\mathrm{cm}}^{3}$ at 4 K. The origin of the low-temperature residual conductivity is discussed.

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Crossref · 10.1103/physrevb.20.4807

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Metadata

Authors
Allen, J. W., Batlogg, B., & Wachter, P.
Venue
Physical Review B
Published
1979-12-15
Volume
20
Issue
12
Pages
4807-4813
ISSN
0163-1829 (ISSN-L)
OpenAlex
W1964832575
Cited by
263
References
1
FWCI
4.83
Type
journal article
Language
en
Open access
closed

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