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Bond lengths around isovalent impurities and in semiconductor solid solutions
Abstract
Using a valence force field, we predict the symmetric lattice distortions around isovalent impurities in 64 semiconductor-impurity systems. For the five systems for which extended x-ray absorption fine-structure (EXAFS) data are available, the results are in excellent agreement with experiment. Our theory also explains quantitatively, without adjustable parameters, the observed bond-length variations in solid solutions ${A}_{1\ensuremath{-}x}{B}_{x}C$ of semiconductor alloys, as well as their excess enthalpies of mixing.
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“The first case is sometimes referred to as the Pauling model, reflecting the view that ionic radii are approximately constant in a given coordination environment. Hence, a particular bond distance (e.g., A–X ) would show essentially no variation across a solid solution and would be the same as the bond distance in the pure A end member (Fig. 1).”
From Structural relaxation in the MnCO 3 -CaCO 3 solid solution: a Mn K -edge EXAFS study (2002) · cites this paper as Martins and Zunger 1984
In the citing paper
“This strain is thought to be the primary contribution to the mixing enthalpy (Martins and Zunger 1984; Carpenter et al. 1999; Geiger 2001).”
From Structural relaxation in the MnCO 3 -CaCO 3 solid solution: a Mn K -edge EXAFS study (2002) · cites this paper as Martins and Zunger 1984
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Cites
Die Konstitution der Mischkristalle und die Raumf�llung der Atome
Vegard, L. (1921) · The European Physical Journal A · doi:10.1007/bf01349680 · Cited by 3,973
Keating, P. N. (1966) · Physical Review · doi:10.1103/physrev.145.637 · Cited by 2,394
Elastic Properties of ZnS Structure Semiconductors
Martin, R. M. (1970) · Physical review. B, Solid state · doi:10.1103/physrevb.1.4005 · Cited by 1,297
Theory of the band-gap anomaly in ABC2 chalcopyrite semiconductors
Jaffe, J. E., & Zunger, A. (1984) · Physical review. B, Condensed matter · doi:10.1103/physrevb.29.1882 · Cited by 969
Self-citationExtended x-ray-absorption fine-structure study of Ga1−xInxAs random solid solutions
Mikkelsen, J. C., & Boyce, J. B. (1983) · Physical review. B, Condensed matter · doi:10.1103/physrevb.28.7130 · Cited by 473
Calculation of ternary and quaternary III–V phase diagrams
Stringfellow, G. B. (1974) · Journal of Crystal Growth · doi:10.1016/s0022-0248(74)80047-3 · Cited by 463
Mikkelsen, J. C., & Boyce, J. B. (1982) · Physical Review Letters · doi:10.1103/physrevlett.49.1412 · Cited by 450
Theory of the silicon vacancy: An Anderson negative- U system
Baraff, G. A., Kane, E. O., & Schlüter, M. (1980) · Physical review. B, Condensed matter · doi:10.1103/physrevb.21.5662 · Cited by 419
Vibrational properties of amorphous Si and Ge
Alben, R., Weaire, D. L., Smith, J. E., & Brodsky, M. H. (1975) · Physical review. B, Solid state · doi:10.1103/physrevb.11.2271 · Cited by 349
Miscibility gaps in quaternary III/V alloys
Stringfellow, G. B. (1982) · Journal of Crystal Growth · doi:10.1016/0022-0248(82)90226-3 · Cited by 338
Research works printed but not linked: 3
- L. Pauling, 1967, The Nature of the Chemical Bond
- R. Alben, 1983, Semiconductors, Pt. a: Physics of Compounds of Group IV Elements and III-V compounds, Pt. b: Physics of II-VI and I-VII Compounds, Semimagnetic Semiconductors
- J. A. Van Vechten, 1980, Semiconductor Handbook, Vol. 3
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Geiger, C. A. (1999) · Mineralogy and Petrology · doi:10.1007/bf01164497 · Cited by 47
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Zax, D. B., Vega, S., Yellin, N., & Zamir, D. (1987) · Chemical Physics Letters · doi:10.1016/0009-2614(87)80350-0 · Cited by 31
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Marbeuf, A., Ballutaud, D., Triboulet, R., Dexpert, H., Lagarde, P., & Marfaing, Y. (1989) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(89)90050-4 · Cited by 29
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Schabel, M. C., & Martins, J. L. (1991) · Physical review. B, Condensed matter · doi:10.1103/physrevb.43.11873 · Cited by 29
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Mobilio, S., & Filipponi, A. (1987) · Journal of Non-Crystalline Solids · doi:10.1016/0022-3093(87)90087-1 · Cited by 28
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Ichimura, M., & Wada, T. (1989) · Journal of Crystal Growth · doi:10.1016/0022-0248(89)90551-4 · Cited by 28
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Menéndez, J. (2000) · Springer series in materials science · doi:10.1007/978-3-662-04221-2_3 · Cited by 27
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Park, C. H., & Chang, K. J. (1993) · Physical review. B, Condensed matter · doi:10.1103/physrevb.47.12709 · Cited by 27
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Wang, Z., Liu, Q., Luo, J., & Zunger, A. (2019) · Materials Horizons · doi:10.1039/c9mh00574a · Cited by 26
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Kar, A., Alexson, D. A., Dutta, M. B., & Stroscio, M. A. (2008) · Journal of Applied Physics · doi:10.1063/1.2986140 · Cited by 26
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Galoisy, L. (1996) · Physics and Chemistry of Minerals · doi:10.1007/bf00207748 · Cited by 25
He, L., Bester, G., & Zunger, A. (2005) · Physical Review B · doi:10.1103/physrevb.72.081311 · Cited by 25
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Tormen, M., Salvador, D. D., Drigo, A. V., Romanato, F., Boscherini, F., & Mobilio, S. (2001) · Physical review. B, Condensed matter · doi:10.1103/physrevb.63.115326 · Cited by 24
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Bellaïche, L., Wei, S., & Zunger, A. (1997) · Physical review. B, Condensed matter · doi:10.1103/physrevb.56.13872 · Cited by 24
Self-citation(2001) · doi:10.1103/physrevb.63.144104 · Cited by 23
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Weir, B. E., Headrick, R. L., Shen, Q., Feldman, L. C., Hybertsen, M. S., Needels, M., Schluter, M. A., & Hart, T. R. (1992) · Physical review. B, Condensed matter · doi:10.1103/physrevb.46.12861 · Cited by 23
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Ford, W. C., & Myles, C. W. (1986) · Physical review. B, Condensed matter · doi:10.1103/physrevb.34.927 · Cited by 23
Taguchi, A., & Ohno, T. (1987) · Physical review. B, Condensed matter · doi:10.1103/physrevb.36.1696 · Cited by 22
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Gürel, H. H., Akıncı, Ö., & Ünlü, H. (2007) · Thin Solid Films · doi:10.1016/j.tsf.2007.12.101 · Cited by 21
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Schenk, M., Hähnert, I., Duong, L. T., & Niebsch, H. ‐. (1996) · Crystal Research and Technology · doi:10.1002/crat.2170310524 · Cited by 21
Direct optical transitions in indirect-gap ( Al0.5 Ga0.5 )0.51 In0.49 P by atomic ordering
Yamashita, K., Kita, T., Nakayama, H., & Nishino, T. (1996) · Physical review. B, Condensed matter · doi:10.1103/physrevb.53.15713 · Cited by 21
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Gao, Q., Şahin, H., Kang, J. Y., & Wei, S. (2021) · Physical review. B./Physical review. B · doi:10.1103/physrevb.104.064204 · Cited by 20
Metadata
- Authors
- Martins, J. L., & Zunger, A.
- Affiliations
- National Laboratory of the Rockies (US)
- ORCID
- Zunger, Alex
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1984-11-15
- Volume
- 30
- Issue
- 10
- Pages
- 6217-6220
- ISSN
- 0163-1829 (ISSN-L)
- OpenAlex
- W2057120313
- Cited by
- 435
- References
- 23
- Citations by year
- 2025: 6 · 2024: 4 · 2023: 3 · 2022: 3 · 2021: 6 · 2020: 7 · 2019: 4 · 2018: 4 · 2017: 1 · 2016: 8 · 2015: 8 · 2014: 6 · 2013: 15 · 2012: 8
- FWCI
- 19.15
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Physical review. B, Condensed matter (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Radiation › X-ray Spectroscopy and Fluorescence Analysis
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Semiconductor materials and interfaces
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced Chemical Physics Studies
- Keywords
- isovalent impurities, bond lengths, lattice distortion, valence force field, semiconductor alloys, solid solutions, EXAFS, excess enthalpy of mixing, doped semiconductors
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