Bond lengths around isovalent impurities and in semiconductor solid solutions

Die Konstitution der Mischkristalle und die Raumf�llung der Atome

Vegard, L. (1921) · The European Physical Journal A · doi:10.1007/bf01349680 · Cited by 3,973

Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure

Keating, P. N. (1966) · Physical Review · doi:10.1103/physrev.145.637 · Cited by 2,394

Elastic Properties of ZnS Structure Semiconductors

Martin, R. M. (1970) · Physical review. B, Solid state · doi:10.1103/physrevb.1.4005 · Cited by 1,297

Theory of the band-gap anomaly in ABC2 chalcopyrite semiconductors

Jaffe, J. E., & Zunger, A. (1984) · Physical review. B, Condensed matter · doi:10.1103/physrevb.29.1882 · Cited by 969

Extended x-ray-absorption fine-structure study of Ga1−xInxAs random solid solutions

Mikkelsen, J. C., & Boyce, J. B. (1983) · Physical review. B, Condensed matter · doi:10.1103/physrevb.28.7130 · Cited by 473

Calculation of ternary and quaternary III–V phase diagrams

Stringfellow, G. B. (1974) · Journal of Crystal Growth · doi:10.1016/s0022-0248(74)80047-3 · Cited by 463

Atomic-Scale Structure of Random Solid Solutions: Extended X-Ray-Absorption Fine-Structure Study of Ga1−xInxAs

Mikkelsen, J. C., & Boyce, J. B. (1982) · Physical Review Letters · doi:10.1103/physrevlett.49.1412 · Cited by 450

Theory of the silicon vacancy: An Anderson negative- U system

Baraff, G. A., Kane, E. O., & Schlüter, M. (1980) · Physical review. B, Condensed matter · doi:10.1103/physrevb.21.5662 · Cited by 419

Vibrational properties of amorphous Si and Ge

Alben, R., Weaire, D. L., Smith, J. E., & Brodsky, M. H. (1975) · Physical review. B, Solid state · doi:10.1103/physrevb.11.2271 · Cited by 349

Miscibility gaps in quaternary III/V alloys

Stringfellow, G. B. (1982) · Journal of Crystal Growth · doi:10.1016/0022-0248(82)90226-3 · Cited by 338

A First‐Principles Investigation on Microscopic Atom Distribution and Configuration‐Averaged Properties in Cd1−xZnxS Solid Solutions

Zhou, Z., Shi, J., Wu, P., & Guo, L. (2014) · ChemPhysChem · doi:10.1002/cphc.201402164 · Cited by 7

Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations

Greene‐Diniz, G., Fischetti, M. V., & Greer, J. C. (2016) · Journal of Applied Physics · doi:10.1063/1.4940740 · Cited by 7

Electronic structure of beta -SiC surfaces

Hu, X., Yan, H. G., Kohyama, M., & Ohuchi, F. S. (1995) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/7/6/010 · Cited by 7

Local structure in solid solutions of stabilised zirconia with actinide dioxides (UO2, NpO2)

Walter, M., Somers, J., Bouëxière, D., & Rothe, J. (2011) · Journal of Solid State Chemistry · doi:10.1016/j.jssc.2011.02.014 · Cited by 7

Modelling of strain fields in quantum wires with continuum methods and molecular statics

Ramsey, J. J., Pan, E., & Chung, P. W. (2008) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/20/48/485215 · Cited by 7

Calculation of near-field scanning optical images of exciton, charged-exciton, and multiexciton wave functions in self-assembled InAs∕GaAs quantum dots

He, L., Bester, G., Su, Z., & Zunger, A. (2007) · Physical Review B · doi:10.1103/physrevb.76.035313 · Cited by 7

Deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems: Theoretical calculations and experimental measurements

Zepeda-Ruiz, L. A., Pelzel, R. I., Nosho, B. Z., Weinberg, W. H., & Maroudas, D. (2001) · Journal of Applied Physics · doi:10.1063/1.1392966 · Cited by 7

Local lattice distortion of Ge-dilute Ge-Si alloy: Multiple-scattering EXAFS study

Sun, Z., Yan, W., Ōyanagi, H., Pan, Z., & Wei, S. (2006) · Physical Review B · doi:10.1103/physrevb.74.092101 · Cited by 6

X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2−xO3 (x = 0–2) films on Si (111)

Niu, G., Zoellner, M. H., Zaumseil, P., Pouliopoulos, A., d’Acapito, F., Schroeder, T. A., & Boscherini, F. (2013) · Journal of Applied Physics · doi:10.1063/1.4788982 · Cited by 6

Growth of dilute BGaP alloys by molecular beam epitaxy

Urakami, N., Fukami, F., Sekiguchi, H., Okada, H., & Wakahara, A. (2013) · Journal of Crystal Growth · doi:10.1016/j.jcrysgro.2012.12.115 · Cited by 6

Equilibrium compositional distribution in freestanding ternary semiconductor quantum dots: The case of InxGa1−xAs

Pandey, S. C., & Maroudas, D. (2011) · The Journal of Chemical Physics · doi:10.1063/1.3666847 · Cited by 6

Nanoscale electrical characterization of arrowhead defects in GaInP thin films grown on Ge

Beinik, I., Galiana, B., Kratzer, M., Teichert, C., Rey‐Stolle, I., Algora, C., & Tejedor, P. (2010) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.3454373 · Cited by 6

Thermodynamic stability of bulk and epitaxial Ge1−x Snx semiconductor alloys

Deı̆buk, V. G., & Korolyuk, Y. G. (2002) · Semiconductors · doi:10.1134/1.1513846 · Cited by 6

First-Principles Calculations of Electronic Structures of New III–V Semiconductors: B x Ga 1−x As and Tl x Ga 1−x As alloys

Zhou, J., Xiao-Min, R., 黄永清, Wang, Q., & Hui, H. (2008) · Chinese Physics Letters · doi:10.1088/0256-307x/25/9/069 · Cited by 6

Distribution of chalcogen atoms in the wurtzite CdSxSe1-xsolid solution: experimental study by X-ray absorption

Ramos, A. Y., Levelut, C., Petiau, J., & Villain, F. (1993) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/5/22/004 · Cited by 6

Direct enumeration studies of band-gap properties of AlxGayIn1−x−yP alloys

Jungthawan, S., Limpijumnong, S., Collins, R. T., Kim, K., Graf, P. A., & Turner, J. A. A. (2009) · Journal of Applied Physics · doi:10.1063/1.3153948 · Cited by 6

Self-assembling conditions of 1N4Al nanoclusters in GaBv-rich (BV=P, As, Sb) alloys

Elyukhin, V. A., & Flores, J. T. (2009) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2009.09.011 · Cited by 6

Epitaxial growth and structure of III-V nitride thin films

Doppalapudi, D., & Moustakas, T. D. (2002) · Elsevier eBooks · doi:10.1016/b978-012512908-4/50052-7 · Cited by 6

Spinodal decomposition range of AlxGa1−xNyAs1−y alloys

Elyukhin, V. A., Sorokina, L. P., & de Santiago, M. R. (2003) · Journal of Applied Physics · doi:10.1063/1.1620372 · Cited by 6

Semiconductor Alloys: Local Bond Lengths, Mixing Enthalpies, and Microclusters

Chen, A.-B., & Sher, A. H. (1985) · MRS Proceedings · doi:10.1557/proc-46-137 · Cited by 6

Local atomic structure in Czochralski-grown Ge1−xSix bulk alloys

Yonenaga, I., Sakurai, M., Sluiter, M. H. F., & Kawazoe, Y. (2003) · Applied Surface Science · doi:10.1016/j.apsusc.2003.08.035 · Cited by 6

Occurrence of a miscibility gap in thin surface layers of Hg1−xCdxTe(s)

Chen, K., Liu, H.-C., Fang, R., Yu, T.-C., & Brebrick, R. F. (1992) · Solid State Communications · doi:10.1016/0038-1098(92)90858-7 · Cited by 6

Circumventing the Uncertainties of the Liquid Phase in the Compositional Control of VLS III–V Ternary Nanowires Based on Group V Intermix

Dubrovskii, V. G. (2024) · Nanomaterials · doi:10.3390/nano14020207 · Cited by 5

Atomistic calculation of the local structure in bulk and strained semiconductor alloys

WOICIK, J. C. (2012) · Journal of Applied Physics · doi:10.1063/1.4767116 · Cited by 5

Electronic structure and optical gain of InAsPN/GaP(N) quantum dots

Chen, J., Fan, W. J., Xu, Q., & Zhang, X. W. (2010) · Superlattices and Microstructures · doi:10.1016/j.spmi.2010.10.001 · Cited by 5

Binary and Ternary Random Alloys

Schnohr, C. S. (2014) · Springer series in optical sciences/SPringer series in optical sciences · doi:10.1007/978-3-662-44362-0_2 · Cited by 5

Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn

Elyukhin, V. A., Sorokina, L. P., Mishurnyi, V. A., & de Anda, F. (2007) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2007.10.116 · Cited by 5

Local structure in dilute nitrides probed by x-ray absorption spectroscopy

Ciatto, G., & Boscherini, F. (2004) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/16/31/010 · Cited by 5

Comments on the Delta Lattice Parameter Model

Ito, T. (1987) · Japanese Journal of Applied Physics · doi:10.1143/jjap.26.l1330 · Cited by 5

Scaling Laws for Transport, Mechanical and Fracture Properties of Disordered Materials

Sahimi, M., & Arbabi, S. (1990) · MRS Proceedings · doi:10.1557/proc-207-201 · Cited by 5

Calculation of bond lengths in an In1−x Gax As1−y Py quaternary-alloy semiconductor

Shen, S.-G., & Fan, Y.-Q. (1994) · Physical review. B, Condensed matter · doi:10.1103/physrevb.50.1506 · Cited by 5

Designing delafossite CuAl1-xTMxO2 solid solutions: the role of 3d transition metal spin states in photo(electro)catalytic performance

Chen, X., Shan, B., & Zhao, Z. (2024) · Materials Today Energy · doi:10.1016/j.mtener.2024.101669 · Cited by 4

Tight binding modelling of electronic band structure in conventional InGaN/GaN and dilute GaAsN/GaAs nitride heterostructures

Gürel, H. H., Akıncı, Ö., & Ünlü, H. (2007) · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · doi:10.1002/pssc.200673273 · Cited by 4

Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

Dion, C. A. D., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M. D., Shtinkov, N., Poole, P. J., Wu, X. M., & Raymond, S. (2008) · Journal of Applied Physics · doi:10.1063/1.2970093 · Cited by 4

The Temperature-Dependent Tight Binding Theory Modelling of Strain and Composition Effects on the Electronic Structure of CdSe- and ZnSe-Based Core/Shell Quantum Dots

Malkoç, D., & Ünlü, H. (2025) · Materials · doi:10.3390/ma18020283 · Cited by 4

Precipitation in AlxGa1-xNyAs1-y Alloys

Elyukhin, V. A., Sorokina, L. P., & Nikishin, S. A. (2003) · Crystal Growth & Design · doi:10.1021/cg034143j · Cited by 4

Isovalent Impurities

Pichler, P. (2004) · Computational microelectronics · doi:10.1007/978-3-7091-0597-9_4 · Cited by 4

Ordered ground state wurtzite alloys from zinc-blende parent compounds

Xiang, H., Wei, S., Chen, S., & Gong, X.-G. (2009) · Physical Review B · doi:10.1103/physrevb.80.113201 · Cited by 4

Bond lengths around isovalent impurities and in semiconductor solid solutions

Shen, S.-G. (1994) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/6/24/007 · Cited by 4

Strain-induced vertical self-organization of semiconductor quantum dots: A computational study

Shtinkov, N. (2013) · Journal of Applied Physics · doi:10.1063/1.4858382 · Cited by 4

Pigments Based on Perovskite

Ardit, M., Cruciani, G., Dondi, M., & Zanelli, C. (2015) · Wiley eBooks · doi:10.1002/9783527686605.ch12 · Cited by 4

Tight-Binding Study of the {211} Σ=3 Grain Boundary in Cubic Silicon-Carbide

Kohyama, M., & Yamamoto, R. (1994) · MRS Proceedings · doi:10.1557/proc-339-9 · Cited by 4

Higher-interband electroreflectance of long-range ordered Ga0.5 In0.5 P

Kita, T., Yamashita, K., & Nishino, T. (1996) · Physical review. B, Condensed matter · doi:10.1103/physrevb.54.16714 · Cited by 4

Local structures in zincblende-type random solid solutions

Wu, Z., & Lu, K. (1994) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/6/24/006 · Cited by 4

Search for stable configuration of (GaAs)1(InAs)1 (111) superlattice

Magri, R., & Calandra, C. (1989) · Superlattices and Microstructures · doi:10.1016/0749-6036(89)90059-1 · Cited by 4

Reply to ‘‘Comment on ‘Atomic structure and ordering in semiconductor alloys’ ’’

Srivastava, G. P., Martins, J. L., & Zunger, A. (1987) · Physical review. B, Condensed matter · doi:10.1103/physrevb.36.2902 · Cited by 4

Interfacial stability and structure in InAs/GaAs(111)A heteroepitaxy: Effects of buffer layer thickness and film compositional grading

Zepeda-Ruiz, L. A., Pelzel, R. I., Weinberg, W. H., & Maroudas, D. (2000) · Applied Physics Letters · doi:10.1063/1.1327275 · Cited by 4

Percolation and Polymer Morphology and Rheology

Sahimi, M. (2021) · Springer eBooks · doi:10.1007/978-1-0716-1457-0_388 · Cited by 3

Modeling local disorder and thermo-structural properties of Ga x In 1 − x As with a transferable interatomic potential

Ribeiro-Silva, C. I., Picinin, A., & Rino, J. P. (2025) · Computational Materials Science · doi:10.1016/j.commatsci.2025.114436 · Cited by 3

Development of an interatomic potential for GaxIn1−xP and its application in describing the mechanical, structural, vibrational, and thermal properties as a function of atomic ordering

Ribeiro-Silva, C. I., Picinin, A., & Rino, J. P. (2025) · Journal of Applied Physics · doi:10.1063/5.0286512 · Cited by 3

Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(111)A

Zepeda-Ruiz, L. A., Weinberg, W. H., & Maroudas, D. (2003) · Surface Science · doi:10.1016/s0039-6028(03)00870-7 · Cited by 3

Resonant Raman Scattering by Acoustic Phonons in Quantum Dots

Mlayah, A., & Groenen, J. (2006) · Springer eBooks · doi:10.1007/978-3-540-34436-0_4 · Cited by 3

Strain profiles and radii of semiconductor rolled‐up tubes made by a single material

Laniel, D., & Shtinkov, N. (2012) · physica status solidi (b) · doi:10.1002/pssb.201248387 · Cited by 3

Atomic structure of Cd1 − x Zn x Te solid solution single crystals and structural prerequisites of their ferroelectricity

Rabadanov, M. K., & Simonov, V. I. (2006) · Crystallography Reports · doi:10.1134/s1063774506050075 · Cited by 3

Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs

Shirakata, S., Kondow, M., & KITATANI, T. (2005) · Japanese Journal of Applied Physics · doi:10.1143/jjap.44.4019 · Cited by 3

Local and extended atomic structure of strained polycrystalline In(1-x)Al(x)Sb alloys

Bolzan, C. A., Johannessen, B., Wu, Z., & Giulian, R. (2020) · Journal of Physics and Chemistry of Solids · doi:10.1016/j.jpcs.2020.109844 · Cited by 3

The Influence of Temperature, Isotope Composition and Impurities on the Lattice Parameter of Si

Biernacki, S. W. (1994) · Metrologia · doi:10.1088/0026-1394/31/3/011 · Cited by 3

The Substitutional Shallow Donor Size Effect

Grinberg, M. (1988) · physica status solidi (b) · doi:10.1002/pssb.2221450228 · Cited by 3

Comment on ‘‘Atomic structure and ordering in semiconducting alloys’’

Podgórny, M., & Czyżyk, M. T. (1987) · Physical review. B, Condensed matter · doi:10.1103/physrevb.36.2897 · Cited by 3

Percolation and Polymer Morphology and Rheology

Sahimi, M. (2009) · Springer eBooks · doi:10.1007/978-0-387-30440-3_388 · Cited by 3

Hexagonal Zn1-xMgxS sheds light on the lattice dynamics of atomic alloys

Elmahjoubi, A., Rao, M. N., Ivanov, A. S., Postnikov, A. V., Polian, A., Alhaddad, T., Chaplot, S. L., Piovano, A., Diliberto, S., Michel, S., et al. (2025) · Scientific Reports · doi:10.1038/s41598-025-17723-6 · Cited by 2

Electrical activation and local structure of Se atoms in ion-implanted indium phosphide

Yu, K. M., Chan, N., & Hsu, L. (1996) · Journal of Applied Physics · doi:10.1063/1.362519 · Cited by 2

Predicted electronic and structural properties of BxIn1−xAs

Tayebi, N., Benkabou, K., & Aoumeur-Benkabou, F. Z. (2012) · Physica B Condensed Matter · doi:10.1016/j.physb.2012.04.010 · Cited by 2

Chemical bonding and optical bowing in III-nitrides solid solutions

Voznyy, O. (2003) · Semiconductor Physics Quantum Electronics & Optoelectronics · doi:10.15407/spqeo6.02.115 · Cited by 2

Local organization in CdSxSe1−x crystallites

Ramos, A. Y., Levelut, C., & Petiau, J. (1991) · Materials Science and Engineering B · doi:10.1016/0921-5107(91)90066-5 · Cited by 2

Tight-binding analysis of the electronic states in AlAs with N isoelectronic impurities

Jo, M., Mano, T., Sakuma, Y., & Sakoda, K. (2014) · Journal of Applied Physics · doi:10.1063/1.4869261 · Cited by 2

Magnetoexcitons in Zn0.98Mn0.02Te under High Hydrostatic Pressure

Hamdani, F., Go�i, A. R., Syassen, K., & Triboulet, R. (2001) · physica status solidi (b) · doi:10.1002/1521-3951(200101)223:1 · Cited by 2

First-principles calculations of the structural and electronic properties of the III-nitrides-based superlattices

Bouhafs, B., Lakdja, A., & Ruterana, P. (2003) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/s1386-9477(02)00772-5 · Cited by 2

The effects of unit cell size on the bandgap range in the direct enumeration study of AlxGayIn1−x−yP alloys

Jungthawan, S., Kim, K., & Limpijumnong, S. (2010) · Computational Materials Science · doi:10.1016/j.commatsci.2010.01.049 · Cited by 2

Bandgap Variation and Miscibility Gaps of Thallium-Based Pseudo-Binary Alloys

Chen, A.-B., & Piao, J. (1999) · MRS Proceedings · doi:10.1557/proc-607-297 · Cited by 2

Modelling of CdSe/CdZnS and ZnSe/CdZnS binary/ternary heterostructure core/shell quantum dots

Ünlü, H. (2018) · AIP conference proceedings · doi:10.1063/1.5025975 · Cited by 2

Extended fine structure in elastically scattered electron spectra: application to a study of Bi on an a-Si surface

Bondarchuck, A. B., Goysa, S. N., Koval, I. P., Melnik, P. V., & Nakhodkin, N. G. (1995) · Surface Science · doi:10.1016/0039-6028(95)00586-2 · Cited by 2

NanoPSE: Nanoscience Problem Solving Environment for atomistic electronic structure of semiconductor nanostructures

Jones, W. B., Bester, G., Canning, A., Franceschetti, A., Graf, P. A., Kim, K., Langou, J., Wang, L., Dongarra, J. J., & Zunger, A. (2005) · Journal of Physics Conference Series · doi:10.1088/1742-6596/16/1/038 · Cited by 2

The local atomic structures in Si1−xGe x random solid solutions

Wu, Z., Lu, K., Dewu, W., Jianfei, L., & Hai-yin, J. (1995) · Zeitschrift für Physik B Condensed Matter · doi:10.1007/s002570050006 · Cited by 2

An elastic model for the In–In correlations in InxGa1−xAs semiconductor alloys

Martins, A. S., Koiller, B., & Capaz, R. B. (2000) · Solid State Communications · doi:10.1016/s0038-1098(00)00198-8 · Cited by 2

A theoretical study for the bond lengths in the GexSi1−x alloys

Xu, Z.-Z. (1994) · Solid State Communications · doi:10.1016/0038-1098(94)90375-1 · Cited by 2

Composition dependence of the bond lengths in the quaternary semiconducting alloy (A1−xBxC1−yDy)

Shim, K., Bae, J., Jeong, S.-Y., Moh, H.-J., & Talwar, D. N. (1996) · Solid State Communications · doi:10.1016/0038-1098(96)80016-0 · Cited by 2

Solid solutions of alkali halide compounds. I. Configurational and vibrational contributions

Krishnamurthy, C. V., & Murti, Y. V. G. S. (1991) · Physical review. B, Condensed matter · doi:10.1103/physrevb.43.14206 · Cited by 2

Self-assembling conditions of 4C10Sn nanoclusters in Ge:(C, Sn)

Elyukhin, V. A., Peralta, P. R., Mishurnyi, V. A., & de Anda, F. (2009) · Journal of End-to-End-testing · doi:10.1016/j.physb.2009.08.106 · Cited by 2

Bondlength distortion of atomic substitutions in semiconductors

Sasireka, D., Palaniyandi, E., & Iyakutti, K. (1999) · Pramana · doi:10.1007/bf02827604 · Cited by 1

First-Principles Study of Structural and Electronic Properties of GaNxAs1-X Alloys

Shu, W., Zhang, X., Wang, Q., Huang, Y., & Ren, X. (2010) · Symposium on Photonics and Optoelectronics · doi:10.1109/sopo.2010.5504408 · Cited by 1

Ordering dependence of carrier lifetimes and ordered states of Ga/sub 0.52/In/sub 0.48/P/GaAs with degree of order ≤0.64

Sasaki, A., Tsuchida, K., Liu, X. Q., Nobutada, O. H. N. O., Narukawa, Y., Kawakami, Y., Fujita, S., Hsu, Y., Fetzer, C. M., & Stringfellow, G. B. (2002) · International Symposium on Compound Semiconductors (ISCS) · doi:10.1109/iscs.2000.947137 · Cited by 1

Modelling of Heterostructures for Low Dimensional Devices

Gürel, H. H., Akıncı, Ö., & Ünlü, H. (2015) · Nanoscience and technology · doi:10.1007/978-3-319-25340-4_1 · Cited by 1

Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN

Katsikini, M., Filintoglou, K., Pinakidou, F., Pliatsikas, N., Arvanitidis, J., Christofilos, D., Paloura, E. C., Ves, S., Reinholz, U., Papadomanolaki, E., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0069359 · Cited by 1

Crystal Bonding

Böer, K. W., & Pohl, U. W. (2022) · Springer eBooks · doi:10.1007/978-3-319-06540-3_2-4 · Cited by 1

LATTICE DISTORTIONS AROUND ATOMIC SUBSTITUTIONS IN II–VI ALLOYS

BALZAROTTI, A. (1987) · Elsevier eBooks · doi:10.1016/b978-0-444-87087-2.50018-4 · Cited by 1

Structural Properties of Heterostructures

Pohl, U. W. (2020) · Graduate texts in physics · doi:10.1007/978-3-030-43869-2_2 · Cited by 1

Modelling of Semiconductors for Low Dimensional Heterostructure Devices

Gürel, H. H., Akıncı, Ö., & Ünlü, H. (2022) · Topics in applied physics · doi:10.1007/978-3-030-93460-6_1 · Cited by 1

Crystal Bonding

Böer, K. W., & Pohl, U. W. (2023) · Springer eBooks · doi:10.1007/978-3-031-18286-0_2 · Cited by 1

Structural Properties of Heterostructures

Pohl, U. W. (2013) · Graduate texts in physics · doi:10.1007/978-3-642-32970-8_2 · Cited by 1

Modeling of Low-Dimensional Semiconductors

Ünlü, H., Gürel, H. H., Akıncı, Ö., & Karim, M. R. (2012) · Nanoscience and technology · doi:10.1007/978-3-642-28424-3_2 · Cited by 1

Effect of the Octahedral Bond Valence on Microwave Dielectric Properties of (1− x )Al 0.5 Ta 0.5 O 2 − x Mg 0.33 Ta 0.67 O 2 Ceramics

Choi, J., Yoon, K. H., & Dover, R. B. V. (2005) · Journal of the American Ceramic Society · doi:10.1111/j.1551-2916.2005.00794.x · Cited by 1

Temperature-dependent facet development in the deposition of GaInP on non-planar surfaces

Bastos, P. L., Anders, M. J., Bongers, M. M. G., Schermer, J. J., & Giling, L. J. (1997) · Surface Science · doi:10.1016/s0039-6028(96)00965-x · Cited by 1

Ab initio factorizedLCAO calculations of the electronic band structure of ZnSe, ZnS, and the (ZnSe )1(ZnS)1 strained-layer superlattice

Marshall, T., & Wilson, T. M. (1992) · International Journal of Quantum Chemistry · doi:10.1002/qua.560440861 · Cited by 1

Phase diagram of Ge:(C, Sn)

Elyukhin, V. A., & Peralta, P. R. (2009) · Superlattices and Microstructures · doi:10.1016/j.spmi.2009.07.034 · Cited by 1

Les oxydes de chrome dans les pigments et les décors de porcelaine

Verger, L. (2015) · theses.fr (ABES) · doi:10.70675/30d6e7d4zfa7bz4f0az98a6z88d592fbcd4f · Cited by 1

Percolation and Polymer Morphology and Rheology

Sahimi, M. (2013) · Springer eBooks · doi:10.1007/978-3-642-27737-5_388-3

Spinodal Decomposition Range of InxGa1-xNySb1-y Alloys

Albarrán, S. F. D., & Elyukhin, V. A. (2005) · National Conference on Electrical and Electronics Engineering (ELECO) · doi:10.1109/iceee.2005.1529657

ALLOYS OF AMORPHOUS HYDROGENATED SILICON

Wagner, S., Slobodin, D., Kolodzey, J. S., Aljishi, S., & Schwarz, R. (1986) · Elsevier eBooks · doi:10.1016/b978-0-08-034334-1.50033-1

Epitaxial Growth of Strained III/V Semiconductor Alloys — Composition and Microstructure

Stringfellow, G. B. (1991) · NATO ASI series. Series B : Physics · doi:10.1007/978-1-4684-1348-9_33

Bondlength distortion of atomic substitutions in semiconductors

Sasireka, D., Palaniyandi, E., & Iyakutti, K. (1999) · Pramana · doi:10.1007/bf02827604 · Cited by 1

Local distortions and volume changes in semiconductors: donors in silicon

Stoneham, A. M., Pajot, B., & Schober, H. R. (1988) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/21/26/016 · Cited by 5

Atomic scale structure of ionic and semiconducting solid solutions

Baldereschi, A., & Peressi, M. (1993) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/5/34b/007 · Cited by 13

Atomic structure model for Ga1−xInxAs solid solution

Fukui, T. (1985) · Journal of Applied Physics · doi:10.1063/1.335254 · Cited by 50

Local structures in zincblende-type random solid solutions

Wu, Z., & Lu, K. (1994) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/6/24/006 · Cited by 4