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Cited by 678

The DOI matches its Crossref record; 33 of the 33 references it cites were found in a registry or an index.

Stresses in semiconductors:Ab initio calculations on Si, Ge, and GaAs

Nielsen, O. H., Martin, Richard M.·1985·Physical Review B

Abstract

Explicit formulas for the calculation of stress are presented based on the stress theorem and the local-density-functional approximation. Norm-conserving pseudopotentials are applied in a plane-wave basis for calculations on the semiconductors Si, Ge, and GaAs. Besides the lattice constants and bulk moduli, complete sets of elastic constants are given, together with the optical \ensuremath{\Gamma} phonon frequencies and internal-strain parameter \ensuremath{\zeta}. Electronic charge density structure factors, deformation potentials, and strain-induced splittings of phonons are given, as well as the nonlinear third-order elastic constants. Good agreement with experiment is found throughout, except for persistent deviations from the x-ray diffraction values for \ensuremath{\zeta}.

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Crossref · 10.1103/physrevb.32.3792

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Metadata

Authors
Nielsen, O. H., & Martin, R. M.
Venue
Physical Review B
Published
1985-09-15
Volume
32
Issue
6
Pages
3792-3805
ISSN
0163-1829 (ISSN-L)
OpenAlex
W2038201676
Cited by
678
References
33
FWCI
11.44
Type
journal article
Language
en
Open access
closed

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