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Quantum-dot quantum well CdS/HgS/CdS: Theory and experiment

Schooss, D., Mews, A., Eychmüller, A., Weller, H.·1994·Physical Review B

Abstract

An extended theoretical approach for calculating the 1s-1s electronic transition in spherically layered semiconductor quantum dots is presented. The extension over the common effective-mass approximation includes the implementation of the Coulomb interaction and finite potential wells at the particle boundaries. The calculations are carried out for the quantum-dot quantum well CdS/HgS/CdS and compared to recently available experimental results. The wave functions of electrons and holes spreading over the entire structure and the probabilities of presence in the different layers, as well as outside the structure in the surrounding dielectric water, are presented.

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Metadata

Authors
Schooss, D., Mews, A., Eychmüller, A., & Weller, H.
Venue
Physical Review B
Published
1994-06-15
Volume
49
Issue
24
Pages
17072-17078
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W1963538241
Cited by
415
References
0
FWCI
6.10
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Quantum-dot quantum well CdS/HgS/CdS: Theory and experiment. https://app.cochat.ai/papers/10.1103/physrevb.49.17072
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Schooss, D., Mews, A., Eychmüller, A., & Weller, H. (1994). Quantum-dot quantum well CdS/HgS/CdS: Theory and experiment. Physical Review B. https://doi.org/10.1103/physrevb.49.17072

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