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Cited by 255

The DOI matches its Crossref record; 24 of the 24 references it cites were found in a registry or an index.

Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s

Oberhuber, R., Zandler, G., Vogl, P.·1998·Physical Review B
DOI 10.1103/physrevb.58.9941
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Abstract

The hole mobility of $p$-type strained Si metal-oxide-semiconductor field-effect transistors (MOSFET's) fabricated on a SiGe substrate is investigated theoretically and compared with the mobility of conventional (unstrained) Si $p$-MOSFET's. Two-dimensional quantization of the holes is taken into account in terms of a self-consistent six-band $\mathbf{k}\mathbf{\ensuremath{\cdot}}\mathbf{p}$ model for the strained band structure and the confined hole subband states in the inversion channel. The hole dynamics along the inversion channel is studied in terms of ensemble Monte Carlo calculations that take into account all relevant scattering mechanisms. For a Ge concentration of $30%$ in the substrate, we predict a mobility enhancement of a factor of 2.3 compared to the unstrained $p$-type device. The calculated low-field mobility is in excellent agreement with experimental data for strained ${\mathrm{S}\mathrm{i}/\mathrm{S}\mathrm{i}}_{0.8}{\mathrm{Ge}}_{0.2}$ and for unstrained Si $p$-MOSFET's.

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Metadata

Authors
Oberhuber, R., Zandler, G., & Vogl, P.
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
1998-10-15
Volume
58
Issue
15
Pages
9941-9948
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
DOI
10.1103/physrevb.58.9941
OpenAlex
W2073720450
Cited by
255
References
24
FWCI
9.73
Type
journal article
Language
en
Open access
closed

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