The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
Open accessAbstract
(Al,Ga)N/GaN quantum wells have been studied by temperature-dependent luminescence and reflectivity. The samples were grown by molecular beam epitaxy on (0001) sapphire substrates, and well widths were varied from 3 to 15 monolayers (ML's) with a 2-ML increment, thus providing a reliable data set for the study of the well width dependence of transition energies. The latter shows a strong quantum confined Stark effect for wide wells, and an internal electric-field strength of 450 kV/cm is deduced. X-ray diffraction performed on the same samples shows that the GaN layers are nearly unstrained, whereas the (Al,Ga)N barriers are pseudomorphically strained on GaN. We conclude that the origin of the electric field is predominently due to spontaneous polarization effects rather than a piezoelectric effect in the well material.
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Cites
Spontaneous polarization and piezoelectric constants of III-V nitrides
Bernardini, F., Fiorentini, V., & Vanderbilt, D. (1997) · Physical Review B · doi:10.1103/physrevb.56.r10024 · Cited by 3,126
Nakamura, S., & Fasol, G. (1997) · Springer eBooks · doi:10.1007/978-3-662-03462-0 · Cited by 1,730
Wei, S.-H., & Zunger, A. (1998) · Applied Physics Letters · doi:10.1063/1.121249 · Cited by 786
Elastic constants of gallium nitride
Polian, A., Grimsditch, M., & Grzegory, I. (1996) · Journal of Applied Physics · doi:10.1063/1.361236 · Cited by 643
Perry, W. G., Zheleva, T. S., Bremser, M. D., Davis, R. F., Shan, W., & Song, J. J. (1997) · Journal of Electronic Materials · doi:10.1007/s11664-997-0155-z · Cited by 86
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Christopoulos, S., von Högersthal, G. B. H., Grundy, A. J. D., Lagoudakis, P. G., Kavokin, A. V., Baumberg, J. J., Christmann, G., Butté, R., Feltin, E., Carlin, J.-F., et al. (2007) · Physical Review Letters · doi:10.1103/physrevlett.98.126405 · Cited by 1,020
Self-citationStrong Light–Matter Interaction in ZnO Microcavities
Lai, Y.-Y., Lan, Y.-P., & Lu, T.-C. (2013) · Light: Science & Applications · doi:10.1038/lsa.2013.32 · Cited by 132
Metadata
- Authors
- Leroux, M., Grandjean, N., Laügt, M., Massies, J., Gil, B., Lefebvre, P., & Bigenwald, P.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1998-11-15
- Volume
- 58
- Issue
- 20
- Pages
- R13371-R13374
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2005824473
- Cited by
- 434
- References
- 5
- FWCI
- 16.90
- Type
- journal article
- Language
- en
- Open access
- green
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- Leroux, M., Grandjean, N., Laügt, M., Massies, J., Gil, B., Lefebvre, P., & Bigenwald, P. (1998). Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells. Physical Review B. https://doi.org/10.1103/physrevb.58.r13371
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