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Spontaneous polarization and piezoelectric constants of III-V nitrides
Open accessAbstract
The spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids. The piezoelectric constants are found to be up to ten times larger than in conventional III-V and II-VI semiconductor compounds, and comparable to those of ZnO. Further properties at variance with those of conventional III-V compounds are the sign of the piezoelectric constants (positive as in II-VI compounds) and the very large spontaneous polarization.
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Cites
Special points for Brillouin-zone integrations
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Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
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Metadata
- Authors
- Bernardini, F., Fiorentini, V., & Vanderbilt, D.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1997-10-15
- Volume
- 56
- Issue
- 16
- Pages
- R10024-R10027
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2127628584
- Cited by
- 3,126
- References
- 2
- FWCI
- 51.36
- Type
- journal article
- Language
- en
- Open access
- green
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