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Spin relaxation in semiconductor quantum dots

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Khaetskii, Alexander V., Nazarov, Yuli V.·2000·Physical Review B

Abstract

We have studied spin-flip processes in GaAs electron quantum dots that accompany transitions between different discrete energy levels. Several different mechanisms that originate from spin-orbit coupling are shown to be responsible for such processes. We have evaluated the rates for all mechanisms with and without a magnetic field. We have shown that the spin relaxation of the electrons localized in the dots differs strikingly from that of the delocalized electrons. The most effective spin-flip mechanisms related to the absence of the inversion symmetry appear to be strongly suppressed for localized electrons. This results in unusually low spin-flip rates.

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Metadata

Authors
Khaetskii, A. V., & Nazarov, Y. V.
Venue
Physical Review B
Published
2000-05-15
Volume
61
Issue
19
Pages
12639-12642
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W2168258625
Cited by
566
References
1
FWCI
15.41
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Spin relaxation in semiconductor quantum dots. https://app.cochat.ai/papers/10.1103/physrevb.61.12639
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Khaetskii, A. V., & Nazarov, Y. V. (2000). Spin relaxation in semiconductor quantum dots. Physical Review B. https://doi.org/10.1103/physrevb.61.12639

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