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Cited by 986

The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.

Oxygen-vacancy-related low-frequency dielectric relaxation and electrical conduction inBi:SrTiO3

Ang, Chen, Yu, Zhi, Cross, L. E.·2000·Physical Review B
DOI 10.1103/physrevb.62.228
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Abstract

The temperature dependence of dielectric properties and electrical conduction of $({\mathrm{Sr}}_{1\ensuremath{-}1.5x}{\mathrm{Bi}}_{x}){\mathrm{TiO}}_{3} (0.0133<~x<~0.133)$ was measured from 10 to 800 K. Three sets of oxygen vacancies related dielectric peaks (peaks A, B, and $C)$ were observed. These peaks could be greatly suppressed or eliminated by annealing the samples in an oxidizing atmosphere, and enhanced or recreated by annealing in a reducing atmosphere. The results show that the Maxwell-Wagner polarization is not the main mechanism, and the Skanavi's model also cannot be directly applied. A tentative explanation was suggested. Peak A, observed in the temperature range of 100--350 K with the activation energy for dielectric relaxation ${E}_{\mathrm{relaxA}}=0.32--0.49$ eV, is attributed to the coupling effect of the conduction electrons with the motion of the off-centered Bi and Ti ions; the conduction carriers in this temperature range are from the first ionization of oxygen vacancies ${(V}_{o}).$ Peaks B and C are also discussed.

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Metadata

Authors
Ang, C., Yu, Z., & Cross, L. E.
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
2000-07-01
Volume
62
Issue
1
Pages
228-236
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
DOI
10.1103/physrevb.62.228
OpenAlex
W2000757875
Cited by
986
References
9
FWCI
7.93
Type
journal article
Language
en
Open access
closed

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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