Scanning tunneling microscopy of defect states in the semiconductor Bi 2 Se 3
Open accessAbstract
Scanning tunneling spectroscopy images of ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry of the defect states in ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.
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These observations are in agreement with the results from first-principles calculation and ARPES data.
“These observations are in agreement with the results from the first-principles calculation and the ARPES data [7, 22].”
From Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry (2009) · cites this paper as [22]
The Bi2Te3 film is an intrinsic bulk insulator.
“The Fermi level (zero bias) is within the energy gap, indicating that the film is an intrinsic bulk insulator [22].”
From Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry (2009) · cites this paper as [22]
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References 17 · Cited by 102
- Authors
- Urazhdin, S., Bilc, D., Tessmer, S. H., Mahanti, S. D., Kyratsi, T., & Kanatzidis, M. G.
- Affiliations
- Michigan State University (US)
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2002-10-04
- Volume
- 66
- Issue
- 16
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2125634383
- Cited by
- 102
- References
- 17
- Citations by year
- 2026: 3 · 2025: 3 · 2024: 4 · 2022: 6 · 2021: 7 · 2020: 5 · 2019: 4 · 2018: 6 · 2017: 6 · 2016: 3 · 2015: 10 · 2014: 7 · 2013: 9 · 2012: 5
- FWCI
- 0.44
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Physical review. B, Condensed matter (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- arXiv (Cornell University)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Surface and Thin Film Phenomena
- Keywords
- Bi2Se3, electronic defect states, bismuth doping, tight-binding model, surface electronic structure, defect geometry, topological insulators, scanning tunneling spectroscopy
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