The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Origins of thep-type nature and cation deficiency inCu2Oand related materials
Abstract
While most of crystalline wide gap oxides are both stoichiometric and insulating, a handful of them including ZnO and ${\mathrm{In}}_{2}{\mathrm{O}}_{3}$ are naturally anion-deficient and electron conductors. Even fewer of the oxides are naturally cation-deficient and hole conductors, the arch-type of which is ${\mathrm{Cu}}_{2}\mathrm{O}$. Based on first principles calculation of equilibrium nonstoichiometry and defect stability, we explain why the ${\mathrm{Cu}}^{(I)}({d}^{10})$ oxide-based materials are both $p$-type and naturally cation-deficient, and why cation vacancies lead to delocalized, conductive states, whereas in other oxides (e.g., ZnO and MgO), they lead to localized, nonconductive states.
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Self-citationDirect observation of d-orbital holes and Cu–Cu bonding in Cu2O
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Cited by
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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Self-citationIdentification and design principles of low hole effective mass p-type transparent conducting oxides
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Atomistic details of oxide surfaces and surface oxidation: the example of copper and its oxides
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Metadata
- Authors
- Raebiger, H., Lany, S., & Zunger, A.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2007-07-16
- Volume
- 76
- Issue
- 4
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2020504721
- Cited by
- 542
- References
- 14
- FWCI
- 8.59
- Type
- journal article
- Language
- en
- Open access
- closed
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