The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides
Abstract
Existing defect models for In(2)O(3) and ZnO are inconclusive about the origin of conductivity, nonstoichiometry, and coloration. We apply systematic corrections to first-principles calculated formation energies Delta H, and validate our theoretical defect model against measured defect and carrier densities. We find that (i) intrinsic acceptors ("electron killers") have a high Delta H explaining high n-dopability, (ii) intrinsic donors ("electron producers") have either a high Delta H or deep levels, and do not cause equilibrium-stable conductivity, (iii) the O vacancy V(O) has a low Delta H leading to O deficiency, and (iv) V(O) has a metastable shallow state, explaining the paradoxical coexistence of coloration and conductivity.
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Cites
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Self-citationFirst-principles study of native point defects in ZnO
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Cited by
Lany, S., & Zunger, A. (2008) · Physical Review B · doi:10.1103/physrevb.78.235104 · Cited by 1,257
Self-citationZnO nanostructures for optoelectronics: Material properties and device applications
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Wide Band Gap Chalcogenide Semiconductors
Woods-Robinson, R., Han, Y., Zhang, H., Ablekim, T., Khan, I., Persson, K. A., & Zakutayev, A. (2020) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00600 · Cited by 513
Solution processing of transparent conductors: from flask to film
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Metadata
- Authors
- Lany, S., & Zunger, A.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2007-01-23
- Volume
- 98
- Issue
- 4
- Pages
- 045501-045501
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1995083936
- Cited by
- 640
- References
- 16
- FWCI
- 19.20
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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