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Microscopic thickness determination of thin graphite films formed onSiCfrom quantized oscillation in reflectivity of low-energy electrons
Open accessAbstract
Low-energy electron microscopy (LEEM) was used to measure the reflectivity of low-energy electrons from graphitized $\mathrm{SiC}(0001)$. The reflectivity shows distinct quantized oscillations as a function of the electron energy and graphite thickness. Conduction bands in thin graphite films form discrete energy levels whose wave vectors are normal to the surface. Resonance of the incident electrons with these quantized conduction band states enhances electrons to transmit through the film into the $\mathrm{SiC}$ substrate, resulting in dips in the reflectivity. The dip positions are well explained using tight-binding and first-principles calculations. The graphite thickness distribution can be determined microscopically from LEEM reflectivity measurements.
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Self-citation
Metadata
- Authors
- Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., & Yamaguchi, H.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2008-02-15
- Volume
- 77
- Issue
- 7
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2031391367
- Cited by
- 362
- References
- 25
- FWCI
- 18.56
- Type
- journal article
- Language
- en
- Open access
- green
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