The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Origins of band-gap renormalization in degenerately doped semiconductors
Abstract
Degenerate $n$-type doping of semiconductors results in optical band-gap widening through occupation of the conduction band, which is partially offset by the so-called band-gap renormalization. From investigation of the magnitude and origin of these shifts through density-functional band-structure theory, we demonstrate that the key contribution to renormalization arises from the nonparabolic nature of the host conduction band but not the rigid shift of the band edges, as is the current paradigm. Furthermore, the carrier dependence of the band-gap widening is highly sensitive to the electronic states of the dopant ion, which can be involved in a significant reconstruction of the lower conduction band.
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Cites
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Anomalous Optical Absorption Limit in InSb
Burstein, E. (1954) · Physical Review · doi:10.1103/physrev.93.632 · Cited by 3,983
Cited by
Band Edge Electronic Structure of BiVO4: Elucidating the Role of the Bi s and V d Orbitals
Walsh, A., Yan, Y., Huda, M. N., Al-Jassim, M. M., & Wei, S.-H. (2009) · Chemistry of Materials · doi:10.1021/cm802894z · Cited by 734
Self-citationDolgonos, A., Mason, T. O., & Poeppelmeier, K. R. (2016) · Journal of Solid State Chemistry · doi:10.1016/j.jssc.2016.05.010 · Cited by 455
Metadata
- Authors
- Walsh, A., Da Silva, J. L. F., & Wei, S.-H.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2008-08-28
- Volume
- 78
- Issue
- 7
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1985676566
- Cited by
- 348
- References
- 2
- FWCI
- 7.93
- Type
- journal article
- Language
- en
- Open access
- closed
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