The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Spin memristive systems: Spin memory effects in semiconductor spintronics
Open accessAbstract
Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behavior is based entirely on the electron-spin degree of freedom, which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behavior. Our scheme is fundamentally different from previously discussed schemes of memristive systems and broadens the possible range of applications of semiconductor spintronics.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268 · cited 2×
“for memristive behaviour3, it is clear that the semiconductor/half-metal junction is a current-controlled memristive system. This can be seen by comparing directly Eqs. (4) and (5) with Eqs. (1) and (2), respectively (we can certainly write Eq. (5) in terms of n discrete variables). In order to observe memristive beha…”
BackgroundMethodInfluentialMemristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Memristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604 · cited 2×
“bstituting Eqs. (8) and (9) into Eq. (4), we get i q t e f N N V sL c ⎥ ⎥ ⎥ ⎥ ⎦ ⎤ ⎢ ⎢ ⎢ ⎢ ⎣ ⎡ ⎟ ⎠ ⎞ ⎜ ⎝ ⎛ − = + ↑ ( ) 2 1 2 (0) ρ ρ0 . (10) It follows from Eq. (10), which is a particular case of Eq. (3), that the resistivity of the system depends only on the amount of charge q(t) flowing through it. 7 E-print arXiv:0…”
BackgroundInfluential
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Cited by
Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
Di Ventra, M., Pershin, Y. V., & Chua, L. O. (2009) · Proceedings of the IEEE · doi:10.1109/jproc.2009.2021077 · Cited by 1,212
Self-citationExperimental demonstration of associative memory with memristive neural networks
Pershin, Y. V., & Di Ventra, M. (2010) · Neural Networks · doi:10.1016/j.neunet.2010.05.001 · Cited by 1,041
Self-citationMemory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823
Self-citationPractical Approach to Programmable Analog Circuits With Memristors
Pershin, Y. V., & Di Ventra, M. (2010) · IEEE Transactions on Circuits and Systems I: Regular Papers · doi:10.1109/tcsi.2009.2038539 · Cited by 639
Self-citationSolid-state memcapacitive system with negative and diverging capacitance
Martinez-Rincon, J., Di Ventra, M., & Pershin, Y. V. (2010) · Physical Review B · doi:10.1103/physrevb.81.195430 · Cited by 99
Self-citation
Metadata
- Authors
- Pershin, Y. V., & Di Ventra, M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2008-09-23
- Volume
- 78
- Issue
- 11
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1509810673
- Cited by
- 236
- References
- 4
- FWCI
- 11.99
- Type
- journal article
- Language
- en
- Open access
- green
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