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Cited by 198

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Electric-field dependent spin diffusion and spin injection into semiconductors

Open access
Yu, Z. G., Flatté, M. E.·2002·Physical Review B
DOI 10.1103/physrevb.66.201202
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Abstract

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high electric-field diffusive regime which has no analog in metals. In this regime there are two distinct spin-diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude. This enhancement also occurs for high electric-field spin injection through a spin-selective interfacial barrier.

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Research works printed but not linked: 20

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Metadata

Authors
Yu, Z. G., & Flatté, M. E.
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
2002-11-14
Volume
66
Issue
20
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
DOI
10.1103/physrevb.66.201202
OpenAlex
W1580514105
Cited by
198
References
0
FWCI
10.30
Type
journal article
Language
en
Open access
green
Licence
link.aps.org/licenses/aps-default-license (vor)

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CoChat. (2026). Citation check: Electric-field dependent spin diffusion and spin injection into semiconductors. https://app.cochat.ai/papers/10.1103/physrevb.66.201202
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Yu, Z. G., & Flatté, M. E. (2002). Electric-field dependent spin diffusion and spin injection into semiconductors. Physical Review B. https://doi.org/10.1103/physrevb.66.201202

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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