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p -type Bi 2 Se 3 for topological insulator and low-temperature thermoelectric applications
Open accessAbstract
The growth and elementary properties of $p$-type ${\text{Bi}}_{2}{\text{Se}}_{3}$ single crystals are reported. Based on a hypothesis about the defect chemistry of ${\text{Bi}}_{2}{\text{Se}}_{3}$, the $p$-type behavior has been induced through low-level substitutions (1% or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle-resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in ${\text{Bi}}_{1.98}{\text{Ca}}_{0.02}{\text{Se}}_{3}$ relative to the $n$-type material. $p$-type single crystals with $ab$-plane Seebeck coefficients of $+180\text{ }\ensuremath{\mu}\text{V}/\text{K}$ at room temperature are reported. These crystals show an anomalous peak in the Seebeck coefficient at low temperatures, reaching $+120\text{ }\ensuremath{\mu}\text{V}\text{ }{\text{K}}^{\ensuremath{-}1}$ at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, $p$-type ${\text{Bi}}_{2}{\text{Se}}_{3}$ is of substantial interest for studies of technologies and phenomena proposed for topological insulators.
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“Subsequently, detailed and systematic surface investigations of Bi 2 Se 3 (23,29,30); Bi 2 Te 3 (31,23,32,33) and Sb 2 Te 3 (32) confirmed the topological band-structure of all 3 of these materials.”
From Three-Dimensional Topological Insulators (2011) · cites this paper as [29]
In the citing paper
“This carrier concentration is one order of magnitude higher than is found in native Bi2 Se3 24,25 , and two orders of magnitude higher than is found for crystals with chemical potentials tuned by Ca doping 28,29 .”
From Superconductivity in Cu x Bi 2 Se 3 and its Implications for Pairing in the Undoped Topological Insulator (2010) · cites this paper as [24]
In the citing paper
“it was concluded that Cu acts as an ambipolar dopant.”
From Superconductivity in Cu x Bi 2 Se 3 and its Implications for Pairing in the Undoped Topological Insulator (2010) · cites this paper as [24]
In the citing paper
“They were recently proposed [2-4] and shortly afterwards discovered in the Bi1 x Sb x [5,6] and Bi2 Se 3 [7,8] materials.”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [8]
In the citing paper
“The system is likely to be significantly delayed in achieving equilibrium by local lattice or charge density fluctuations such as may arise from site defects, which are prominent in such materials [8,26].”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [8]
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Puthran, S., Hegde, G. S., Prabhu, A. N., Chen, Y.-H., Kuo, Y. K., & Mishra, V. (2025) · Journal of Materials Science Materials in Electronics · doi:10.1007/s10854-025-14609-1 · Cited by 6
Intrinsic and extrinsic effects on the electrostatic field at the surface of Bi2Se3
Xu, C., Hewitt, A., Wang, J., Guan, T., Boltersdorf, J. A., Maggard, P. A., Dougherty, D. B., & Gündoğdu, K. (2014) · Journal of Applied Physics · doi:10.1063/1.4891719 · Cited by 6
Pb-doped p -type Bi 2 Se 3 thin films via interfacial engineering
Moon, J., Huang, Z., Wu, W., & Oh, S. (2020) · Physical Review Materials · doi:10.1103/physrevmaterials.4.024203 · Cited by 6
Influence on electrical properties of pristine bulk Bi2Se3 compound by substitutional doping of ‘In’
Patel, N. F., Bhakhar, S. A., Gupta, S. U., Chauhan, B. L., & Solanki, G. K. (2023) · Journal of Materials Science Materials in Electronics · doi:10.1007/s10854-022-09607-6 · Cited by 6
Enhancement of the Seebeck Coefficient in Stacked Bi2Se3 Nanoplates by Energy Filtering
Xu, H., Chen, G., Jin, R., Chen, D., Wang, Y., Pei, J., Yan, C., Zhang, Y., & Qiu, Z. (2014) · European Journal of Inorganic Chemistry · doi:10.1002/ejic.201301601 · Cited by 6
Niu, C., Dai, Y., Guo, M., Ma, Y., Huang, B., & Whangbo, M. (2012) · Journal of Materials Chemistry C · doi:10.1039/c2tc00017b · Cited by 6
Unzueta, I., Zabala, N., Marín‐Borrás, V., Muñoz-Sanjosé, V., García, J. A., & Plazaola, F. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.94.014117 · Cited by 6
Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films
Rogacheva, E. I., Budnik, A. V., Nashchekina, O. N., Meriuts, A. V., & Dresselhaus, M. S. (2017) · Journal of Electronic Materials · doi:10.1007/s11664-017-5561-2 · Cited by 6
Surface properties of topological insulator Bi2Se3 nanoparticles separated by impedance spectroscopy
Choi, D. M., Lee, K. W., Jeon, G. W., Kim, D. W., & Lee, C. E. (2017) · Applied Physics Letters · doi:10.1063/1.4986960 · Cited by 6
Bi 2 Se 3 topological insulator at the 2D-limit: role of halide-doping on Dirac point
Khatun, S., Bhunia, H., & Pal, A. J. (2018) · Physical Chemistry Chemical Physics · doi:10.1039/c8cp02604a · Cited by 6
Studies on Shubnikov-de Hass oscillations in p-Sb2Te2Se topological insulator
Govindhan, G., Amaladass, E. P., Govindan, A. B., Sarveswaran, G., & Mani, A. (2019) · Materials Research Bulletin · doi:10.1016/j.materresbull.2019.110733 · Cited by 6
High temperature thermoelectric properties of the tetradymite Bi2−xPbxTe2Se (0 ≤ x ≤ 0.03)
Léon, A., Misra, S., Levinský, P., Hejtmánek, J., Wiendlocha, B., Lenoir, B., & Candolfi, C. (2021) · Applied Physics Letters · doi:10.1063/5.0077166 · Cited by 6
Gehring, P., & Burghard, M. (2014) · Physik in unserer Zeit · doi:10.1002/piuz.201401373 · Cited by 6
Stable bismuth sub-monolayer termination of Bi2Se3
Hermanowicz, M., Koczorowski, W., Bazarnik, M., Kopciuszyński, M., Zdyb, R., Materna, A., Hruban, A., Czajka, R., & Radny, M. W. (2019) · Applied Surface Science · doi:10.1016/j.apsusc.2019.01.011 · Cited by 6
A computational investigation of topological insulator Bi2Se3 film
Hu, Y., Zhao, Y.-H., & Wang, X. (2014) · Frontiers of Physics · doi:10.1007/s11467-014-0441-1 · Cited by 6
Hagmann, J. A., Liu, X., Dobrowolska, M., & Furdyna, J. K. (2013) · Journal of Applied Physics · doi:10.1063/1.4798482 · Cited by 6
Metadata
- Authors
- Hor, Y. S., Richardella, A., Roushan, P., Xia, Y., Checkelsky, J. G., Yazdani, A., Hasan, M. Z., Ong, N. P., & Cava, R. J.
- Affiliations
- Princeton University (US)
- ORCID
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2009-05-21
- Volume
- 79
- Issue
- 19
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2007208171
- Cited by
- 647
- References
- 23
- Citations by year
- 2026: 16 · 2025: 18 · 2024: 26 · 2023: 21 · 2022: 34 · 2021: 29 · 2020: 42 · 2019: 36 · 2018: 38 · 2017: 41 · 2016: 53 · 2015: 48 · 2014: 58 · 2013: 48 · 2012: 56
- FWCI
- 22.20
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Physical Review B (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- arXiv (Cornell University)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Topological Materials and Phenomena
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Keywords
- Bi2Se3, topological insulators, thermoelectric properties, Seebeck coefficient, thermoelectric power factor, low-temperature thermoelectricity, calcium substitution, defect chemistry, Fermi level position, single crystal growth, scanning tunneling microscopy, angle-resolved photoemission
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