Tight-binding approach to uniaxial strain in graphene
Open accessAbstract
We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk spectral gap. However, this gap is critical, requiring threshold deformations in excess of 20% and only along preferred directions with respect to the underlying lattice. The gapless Dirac spectrum is robust for small and moderate deformations and the gap appears as a consequence of the merging of the two inequivalent Dirac points only under considerable deformations of the lattice. We discuss how strain-induced anisotropy and local deformations can be used as a means to affect transport characteristics and pinch off current flow in graphene devices.
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Introducing anisotropy along the vertical and diagonal directions into graphene leads to broken six-fold symmetry and level crossing with deformation of the bandstructure.
“In contrast, introducing the anisotropy along the vertical direction and diagonal direction into the graphene leads to the broken six-fold symmetry and level crossing with the deformation of the bandstructure [29-31].”
From Observing movement of Dirac cones from single-photon dynamics (2021) · cites this paper as [29]
The paper reports direction-dependent anisotropy and deformation of graphene’s band structure (VI. Critical Gap, pp. 4–5). It also says the Dirac cones eventually merge under zig-zag strain, but never meet under armchair strain; the gap requires a critical deformation. The cited passages do not identify the directions as “vertical” and “diagonal” or explicitly describe broken six-fold symmetry, so they do not support the claim’s unqualified account of level crossing in both directions. (LLM, conf=0.86)
Experimental — accuracy not yet measuredThe opening band gap in graphene requires large strain, even exceeding the order of 20%, attributed to deformations and anisotropy by applying strain instead of inner disorders or fluctuation.
“One should note that the opening band gap in graphene requires large strain, even exceeding the order of 20% [24, 29], which is attributed to the deformations and anisotropy by applying strain instead of the inner disorders or fluctuation of the graphene.”
From Observing movement of Dirac cones from single-photon dynamics (2021) · cites this paper as [29]
The opening passage (p. 1) and Discussion (p. 6) say that a bulk spectral gap induced by uniform strain requires deformation exceeding 20% in the paper’s tight-binding model, with the outcome depending on strain direction. The paper attributes gap opening to the merging of Dirac points, not to anisotropy itself, and the cited passages do not establish the claim’s contrast with intrinsic disorder or fluctuations. (LLM, conf=0.84)
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Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834 · see citing works
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979 · see citing works
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803 · see citing works
Self-citationTwo-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611 · see citing works
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Research works printed but not linked: 1
- 40 V. M. Pereira and A. H. Castro Neto, arXiv:0810.4539 (2008). · arXiv
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Sorted by citations
Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering
Guinea, F., Katsnelson, M. I., & Geim, A. K. (2010) · Nature Physics · doi:10.1038/nphys1420 · Cited by 1,913 · see citing works
Szameit, A., Rechtsman, M. C., Bahat-Treidel, O., & Segev, M. (2011) · Physical Review A · doi:10.1103/physreva.84.021806 · Cited by 280 · see citing works
Topological Transition of Dirac Points in a Microwave Experiment
Bellec, M., Kuhl, U., Montambaux, G., & Mortessagne, F. (2013) · Physical Review Letters · doi:10.1103/physrevlett.110.033902 · Cited by 189 · see citing works
Universal momentum-to-real-space mapping of topological singularities
Liu, X., Xia, S., Jajtić, E., Song, D., Li, D., Tang, L., Leykam, D., Xu, J., Buljan, H., & Chen, Z. (2020) · Nature Communications · doi:10.1038/s41467-020-15374-x · Cited by 45 · see citing works
Observing movement of Dirac cones from single-photon dynamics
Lu, Y.-H., Wang, Y., Chang, Y.-J., Li, Z.-M., Cui, W.-H., Gao, J., Zhou, W.-H., Zheng, H., & Jin, X.-M. (2021) · Physical Review B · doi:10.1103/physrevb.103.064304 · Cited by 7 · see citing works
“[29] Pereira, V.”
Background
- Authors
- Pereira, V. M., Castro Neto, A. H., & Peres, N. M. R.
- Affiliations
- Boston University (US)
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2009-07-01
- Volume
- 80
- Issue
- 4
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1982311541
- Cited by
- 1,350
- References
- 4
- Citations by year
- 2026: 51 · 2025: 76 · 2024: 54 · 2023: 60 · 2022: 69 · 2021: 72 · 2020: 95 · 2019: 80 · 2018: 85 · 2017: 95 · 2016: 97 · 2015: 119 · 2014: 96 · 2013: 80 · 2012: 79
- FWCI
- 35.14
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Physical Review B (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- arXiv (Cornell University)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Surface and Thin Film Phenomena
- Keywords
- graphene, uniaxial strain, tension, electronic band structure, Dirac point, strain-induced anisotropy, tight-binding model, linear elasticity, graphene devices
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