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Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

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Basko, D. M., Piscanec, S., Ferrari, A. C.·2009·Physical Review B

Abstract

Raman spectroscopy is a fast and nondestructive means to characterize graphene samples. In particular, the Raman spectra are strongly affected by doping. While the resulting change in position and width of the $G$ peak can be explained by the nonadiabatic Kohn anomaly at $\ensuremath{\Gamma}$, the significant doping dependence of the $2D$ peak intensity has not been understood yet. Here we show that this is due to a combination of electron-phonon and electron-electron scattering. Under full resonance, the photogenerated electron-hole pairs can scatter not just with phonons but also with doping-induced electrons or holes, and this changes the intensity. We explain the doping dependence and show how it can be used to determine the corresponding electron-phonon coupling. This is higher than predicted by density-functional theory, as a consequence of renormalization by Coulomb interactions.

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Metadata

Authors
Basko, D. M., Piscanec, S., & Ferrari, A. C.
Venue
Physical Review B
Published
2009-10-16
Volume
80
Issue
16
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
OpenAlex
W2068867644
Cited by
468
References
4
FWCI
15.95
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene. https://app.cochat.ai/papers/10.1103/physrevb.80.165413
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Basko, D. M., Piscanec, S., & Ferrari, A. C. (2009). Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene. Physical Review B. https://doi.org/10.1103/physrevb.80.165413

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