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Intrinsic phonon relaxation times from first-principles studies of the thermal conductivities of Si and Ge
Abstract
Using a first-principles approach, we present forms for the intrinsic phonon relaxation times in semiconductors, which properly reflect the physically distinct behaviors of the normal and umklapp scattering processes. We find that accurate representation of the phonon-phonon scattering strength and inclusion of scattering of acoustic phonons by optic phonons are essential ingredients, which are missing from the decades old derivations of commonly used intrinsic relaxation times. We also assess the validity of the relaxation time approximation itself for silicon and germanium.
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Citations
Cites
Intrinsic lattice thermal conductivity of semiconductors from first principles
Broido, D. A., Malorny, M., Birner, G., Mingo, N., & Stewart, D. A. (2007) · Applied Physics Letters · doi:10.1063/1.2822891 · Cited by 978
Self-citationMorelli, D. T., Heremans, J. P., & Slack, G. A. (2002) · Physical Review B · doi:10.1103/physrevb.66.195304 · Cited by 628
Cited by
ShengBTE: A solver of the Boltzmann transport equation for phonons
Li, W., Carrete, J., A. Katcho, N., & Mingo, N. (2014) · Computer Physics Communications · doi:10.1016/j.cpc.2014.02.015 · Cited by 3,147
The high-throughput highway to computational materials design
Curtarolo, S., Hart, G. L. W., Nardelli, M. B., Mingo, N., Sanvito, S., & Levy, O. (2013) · Nature Materials · doi:10.1038/nmat3568 · Cited by 2,053
Nanoscale thermal transport. II. 2003–2012
Cahill, D. G., Braun, P. V., Chen, G., Clarke, D. R., Fan, S., Goodson, K. E., Keblinski, P., King, W. P., Mahan, G. D., Majumdar, A., et al. (2014) · Applied Physics Reviews · doi:10.1063/1.4832615 · Cited by 1,763
Heat transport in silicon from first-principles calculations
Esfarjani, K., Chen, G., & Stokes, H. T. (2011) · Physical Review B · doi:10.1103/physrevb.84.085204 · Cited by 759
Thermal Conductivity Spectroscopy Technique to Measure Phonon Mean Free Paths
Minnich, A. J., Johnson, J. A., Schmidt, A. J., Esfarjani, K., Dresselhaus, M. S., Nelson, K. A., & Chen, G. (2011) · Physical Review Letters · doi:10.1103/physrevlett.107.095901 · Cited by 556
Metadata
- Authors
- Ward, A., & Broido, D. A.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2010-02-04
- Volume
- 81
- Issue
- 8
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2032689948
- Cited by
- 374
- References
- 2
- FWCI
- 11.89
- Type
- journal article
- Language
- en
- Open access
- closed
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- Ward, A., & Broido, D. A. (2010). Intrinsic phonon relaxation times from first-principles studies of the thermal conductivities of Si and Ge. Physical Review B. https://doi.org/10.1103/physrevb.81.085205
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