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Accurate defect levels obtained from the HSE06 range-separated hybrid functional
Open accessAbstract
Defect levels are a problem for standard implementations of density-functional theory and the error also influences the energetics. We demonstrate that the HSE06 functional, which describes the electronic structure of all group-IV semiconductors well (including Ge), gives highly accurate charge transition levels, too, if the defect wave function is host related---independent of localization. The degree of fulfilling the generalized Koopmans' theorem shows the reliability of the results and the highest-occupied eigenvalue always seems to give the correct vertical ionization energy.
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Metadata
- Authors
- Deák, P., Aradi, B., Frauenheim, T., Janzén, E., & Gali, A.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2010-04-12
- Volume
- 81
- Issue
- 15
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1999242781
- Cited by
- 409
- References
- 2
- FWCI
- 9.48
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Deák, P., Aradi, B., Frauenheim, T., Janzén, E., & Gali, A. (2010). Accurate defect levels obtained from the HSE06 range-separated hybrid functional. Physical Review B. https://doi.org/10.1103/physrevb.81.153203
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