The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Energy gap tuning in graphene on hexagonal boron nitride bilayer system
Open accessAbstract
We use a tight-binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the direction perpendicular to the layers significantly modifies the electronic structure of the whole system, including shifts, anticrossing and other deformations of bands, which can allow to control a value of the energy gap. It is shown that band structure of biased system may be tailored for specific requirements of nanoelectronics applications. The carriers' mobilities are expected to be higher than in the bilayer graphene devices.
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Citations
Cites
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033
Slonczewski, J. C., & Weiss, P. R. (1958) · Physical Review · doi:10.1103/physrev.109.272 · Cited by 1,647
Asymmetry gap in the electronic band structure of bilayer graphene
McCann, E. (2006) · Physical Review B · doi:10.1103/physrevb.74.161403 · Cited by 1,275
Cited by
Two-dimensional heterostructures: fabrication, characterization, and application
Wang, H., Liu, F., Fu, W., Fang, Z., Zhou, W., & Liu, Z. (2014) · Nanoscale · doi:10.1039/c4nr03435j · Cited by 403
Guo, G.-C., Wang, D., Wei, X.-L., Zhang, Q., Liu, H., Lau, W.-M., & Liu, L.-M. (2015) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.5b02513 · Cited by 355
Tunable Band Gaps in Bilayer Graphene−BN Heterostructures
Ramasubramaniam, A., Naveh, D., & Towe, E. (2011) · Nano Letters · doi:10.1021/nl1039499 · Cited by 253
Metadata
- Authors
- Sławińska, J., Zasada, I., & Klusek, Z.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2010-04-16
- Volume
- 81
- Issue
- 15
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1986361365
- Cited by
- 237
- References
- 5
- FWCI
- 7.26
- Type
- journal article
- Language
- en
- Open access
- green
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- Sławińska, J., Zasada, I., & Klusek, Z. (2010). Energy gap tuning in graphene on hexagonal boron nitride bilayer system. Physical Review B. https://doi.org/10.1103/physrevb.81.155433
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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