Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Open accessAbstract
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.
AI snapshot
Written from the paper’s full text.
TL;DR
The paper reports that bilayer graphene can be converted into a semiconductor whose band gap is externally tunable by gate bias, with the gap ranging from zero to mid-infrared energies. Magnetotransport measurements and tight-binding modeling show clear gap signatures, including a zero Hall conductivity plateau and an asymmetric cyclotron mass.
Key findings
- In biased bilayer graphene, a plateau at zero Hall conductivity appears at the neutrality point, unlike the pristine case; the longitudinal resistivity at neutrality exceeded 150 kΩ at 4 K for the biased device, compared with 6 kΩ for the unbiased device under the same conditions.
- The cyclotron mass depends asymmetrically on carrier density, and comparison with tight-binding theory yields an interlayer hopping parameter of 0.22 eV and indicates gaps larger than 0.2 eV.
- A small-bias linear fit to the screened theory gives a gap of about 1.2 meV per volt relative to a gate voltage of 25 V, while the theory predicts gap saturation at the interlayer hopping scale.
- The model agrees well with angle-resolved photoemission data, except in the gap saturation regime around densities of about 50 × 10¹² cm⁻².
Methods
- Bilayer graphene devices were prepared by micromechanical cleavage on 300 nm SiO₂ and patterned into Hall bars; carrier density was controlled by a Si backgate and by NH₃ chemical doping, with transport measured by lock-in techniques in fields up to 12 T and temperatures from 4 to 300 K.
- Shubnikov–de Haas oscillations were measured versus temperature and fitted to extract the cyclotron mass as a function of carrier density.
- The data were interpreted with a Bernal-stacked bilayer tight-binding model using in-plane hopping of 3.1 eV and interlayer hopping of 0.22 eV, including a self-consistent Hartree treatment of screening; Hall conductivity was modeled for a zigzag-edged ribbon in a magnetic field.
Limitations
- The paper states that the Hartree approach is reliable only when the gap is small compared with the interlayer hopping; for hole doping it underestimates the cyclotron mass while the unscreened model overestimates it, so the true gap lies between these limits and a better screening treatment is needed when the electrostatic energy becomes comparable to the interlayer hopping.
- The paper notes that the comparison with angle-resolved photoemission data works well except in the gap saturation regime at high density.
- Evident from the text: for the transport devices, the gap values are inferred by fitting a tight-binding/Hartree model to magnetotransport rather than measured directly by a spectroscopic probe.
Model-written summary. Check it against the paper before relying on it.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
0 of 8 cited sources checked · 0 supported · 0 flagged
- Findingown data
The opening of a gap in biased bilayer graphene is clearly seen in the quantum Hall regime.
“The opening of a gap is clearly seen in the quantum Hall regime.”
Quote in the paperSubstantial claim - Findingown data
The zero Hall conductivity plateau is absent in the unbiased bilayer.
“which is absent in the unbiased case”
Quote in the paperSubstantial claim - Findingown data
By comparing observed behavior with tight-binding results, the gap can be tuned to values larger than 0.2 eV.
“by comparing the observed behavior with our tightbinding results, we show that the gap can be tuned to values larger than 0.2 eV”
Quote in the paperSubstantial claim - Findingown data
In the biased device, the longitudinal resistivity xx at n=0 exceeded 150 kOhm at 4 K, compared to 6 kOhm for the unbiased case under the same conditions.
“in the biased device, xx at n 0 exceeded 150 kOhm at 4 K, as compared to 6 kOhm for the unbiased case under the same conditions”
Quote in the paperSubstantial claim - Findingown data
In a magnetic field, a pronounced plateau at zero Hall conductivity is found for the biased bilayer.
“in a magnetic field, a pronounced plateau at zero Hall conductivity xy 0 is found for the biased bilayer”
Quote in the paperSubstantial claim
- Findingown data
The cyclotron mass in the bilayer biased by chemical doping is an asymmetric function of carrier density n.
“the cyclotron mass, m c , in the bilayer biased by chemical doping is an asymmetric function of carrier density, n”
Quote in the paperSubstantial claim - Findingown data
The cyclotron mass increases linearly with |n| in the chemically biased bilayer.
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
Quote in the paperSubstantial claim - Findingown data
The gap of biased bilayer graphene can be changed from zero to midinfrared energies by using fields of <1 V/nm, below the electric breakdown of SiO2.
“We show that the gap can be changed from zero to midinfrared energies by using fields of & 1 V=nm, below the electric breakdown of SiO 2 .”
Quote in the paperSubstantial claim- Rests on an assumption: The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
- Findingown data
There is a pronounced asymmetry between hole- and electron-doping of the biased bilayer in cyclotron mass.
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
Quote in the paperSubstantial claim - Findingown data
The energy gap in the biased bilayer is revealed by the appearance of the N=0 plateau at xy=0.
“The energy gap is revealed by the appearance of the N 0 plateau at xy 0 [see the curve labeled ''doped'' in Fig. 1(a)].”
Quote in the paperSubstantial claim - Findingown data
The electronic gap of a graphene bilayer can be controlled externally by applying a gate bias.
“We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias.”
Quote in the paperSubstantial claim - Findingown data
The unbiased gapless semiconductor becomes, with application of an electrostatic potential V, a small-gap semiconductor.
“the unbiased gapless semiconductor (dashed line) becomes, with the application of an electrostatic potential V, a small-gap semiconductor (solid line)”
Quote in the paperSubstantial claim - Findingnone given
The cyclotron energy in the case of Fig. 1(a) is estimated to be >40 meV.
“The latter is estimated to be >40 meV in the case of Fig. 1(a).”
Quote in the paperSubstantial claim - Findingreasoning
The experimental data in Fig. 1(b) interpolate between the screened result at low hole doping and the unscreened one for high hole densities.
“the experimental data in Fig. 1(b) interpolate between the screened result at low hole doping and the unscreened one for high hole densities.”
Quote in the paperSubstantial claim - Findingown data
The unscreened model cannot describe the ARPES experimental data.
“The result for the unscreened case [Eq.( 1)]shown in Fig. 2(c) as a dashed line-cannot describe the experimental data.”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [8] 8. Theory of the gap opening within the continuum model was previously given by E. McCann, Phys. Rev. B 74, 161403 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- The authors state this as an assumption: The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
- Findingown data
The interlayer coupling t⊥ was found to be 0.22 eV, in good agreement with values found in the literature.
“We found t ?0:22 eV, in good agreement with values found in the literature.”
Quote in the paperSubstantial claim - Findingreasoning
There is an intravalley degeneracy lifting because only one of the two Landau states of the unbiased system remains an eigenstate when a bias is applied.
“Also, there is an intravalley degeneracy lifting [Fig.3(c)], because only one of the two Landau states of the unbiased system remains an eigenstate when a bias is applied.”
Quote in the paperNot a substantial claim - Findingown data
The behavior of a diverging longitudinal resistivity at the zero Hall plateau has been observed experimentally.
“This behavior has been observed experimentally, as discussed above with reference to Fig. 1(a).”
Quote in the paperSubstantial claim - Findingown data
The screened result provides a somewhat better fit than the unscreened model, especially at low electron densities.
“the screened result provides a somewhat better fit than the unscreened model, especially at low electron densities.”
Quote in the paperSubstantial claim - Findingown data
A linear fit to the screened result for small gap yields Δg = 1.2 meV/V × |Vg - V0 - 25|.
“yielding g meV jV g V ÿ 25j with a coefficient 1:2 meV=V.”
Quote in the paperSubstantial claim - Findingown data
The screened results for t⊥=0.2 eV and t⊥=0.4 eV are in good agreement with the ARPES experiment, except in the gap saturation regime at n > 50×10^12 cm^-2.
“both are in good agreement with the experiment, except in the gap saturation regime at n * 50 10 12 cm ÿ2 .”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [8] 8. Theory of the gap opening within the continuum model was previously given by E. McCann, Phys. Rev. B 74, 161403 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Findingown data
The theoretical dependence mc(n) agrees well with the experimental data for the case of electron doping.
“The theoretical dependence m c n agrees well with the experimental data for the case of electron doping.”
Quote in the paperSubstantial claim - Findingown data
The valley degeneracy is lifted due to the different nature of the Landau states at K and K' valleys with respect to their projection in each layer.
“A close inspection of Fig. 3 shows that the valley degeneracy is lifted due to the different nature of the Landau states at K and K 0 valleys with respect to their projection in each layer.”
Quote in the paperSubstantial claim - Interpretationown data
The zero Hall conductivity plateau can only be understood as due to the opening of a sizable gap between the valence and conduction bands.
“which is absent in the unbiased case and can only be understood as due to the opening of a sizable gap, g , between the valence and conductance bands”
Quote in the paperSubstantial claim - Interpretationown data
The recovered sequence of equidistant plateaus represents the standard integer QHE expected for an ambipolar semiconductor with an energy gap exceeding the cyclotron energy.
“The recovered sequence of equidistant plateaus represents the ''standard'' integer QHE that would be expected for an ambipolar semiconductor with an energy gap exceeding the cyclotron energy.”
Quote in the paperSubstantial claim - Interpretationreasoning
As V can be externally controlled, this model predicts that biased bilayer graphene should be a tunable-gap semiconductor.
“As V can be externally controlled, this model predicts that biased bilayer graphene should be a tunable-gap semiconductor”
Quote in the paperSubstantial claim - Premisecitation
The gap does not reach a minimum at the K point due to the Mexican-hat dispersion at low energies.
“Note that the gap does not reach a minimum at the K point due to the ''Mexican-hat'' dispersion at low energies [11].”
Quote in the paperNot a substantial claim0 of 1 sources checked- cites [11] 11. F. Schedin et al., Nature Mater. 6, 652 (2007).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Premisecitation
The Hall conductivity of the unbiased bilayer exhibits a sequence of plateaus at xy=4Ne2/h where N is integer and the factor 4 accounts for graphene's quadruple degeneracy.
“In this case, the Hall conductivity exhibits a sequence of plateaus at xy 4Ne 2 =h where N is integer and the factor 4 takes into account graphene's quadruple degeneracy.”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [3] 3. K. S. Novoselov et al., Nature Phys. 2, 177 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Interpretationnone given
The theory predicts a gap saturation to Δg ~ t⊥ at large biases.
“the theory predicts a gap saturation to g t ? at large biases.”
Quote in the paperSubstantial claim - Interpretationreasoning
In the present case there is no net charge transfer across the ribbon.
“However, in the present case there is no net charge transfer across the ribbon.”
Quote in the paperSubstantial claim - Interpretationreasoning
The linear fit is valid only in the small-gap regime (Δg << t⊥).
“The linear fit is valid in the small-gap regime ( g t ? ) only”
Quote in the paperNot a substantial claim - Interpretationown data
The true gap lies between the unscreened and screened limits.
“This indicates that the true gap actually lies between the unscreened and screened limits”
Quote in the paperSubstantial claim - Interpretationreasoning
The underestimation/overestimation in hole doping can be attributed to the fact that the Hartree theory used here is reliable only if the gap is small compared to t⊥.
“This can be attributed to the fact that the Hartree theory used here is reliable only if the gap is small compared to t ? .”
Quote in the paperSubstantial claim - Interpretationreasoning
For doping of the same sign from both sides of bilayer graphene, the gap is well described by the screened approach.
“allows us to conclude that for doping of the same sign from both sides of bilayer graphene, the gap is well described by the screened approach.”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [8] 8. Theory of the gap opening within the continuum model was previously given by E. McCann, Phys. Rev. B 74, 161403 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Interpretationreasoning
Practically the whole range of allowed gaps (up to t⊥) should be achievable for the demonstrated devices.
“practically the whole range of allowed gaps (up to t ? ) should be achievable for the demonstrated devices.”
Quote in the paperSubstantial claim- Rests on an assumption: The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
- Interpretationreasoning
The Hall conductivity of the biased bilayer is given by xy=4Ne2/h for all integer N, including zero.
“Accordingly, the Hall conductivity of the biased bilayer is given by xy 4Ne 2 =h for all integer N, including zero.”
Quote in the paperSubstantial claim - Interpretationreasoning
A Hall plateau at xy=0 is expected when the carriers change sign, i.e., at the neutrality point.
“Therefore, we expect a Hall plateau xy 0 showing up when the carriers change sign, i.e., at the neutrality point.”
Quote in the paperSubstantial claim
- May combine two claims. 10
- The quote only partly states this claim. 2
- Classified as probably not a substantial claim. 1
May combine two claims.
FindingcitationThe N=0 plateau is absent in the unbiased bilayer, so that a double step of 8e2/h in height occurs at n=0, indicating a metallic state at the neutrality point.
“The N 0 plateau is strikingly absent, so that a double step of 8e 2 =h in height occurs at n 0, indicating a metallic state at the neutrality point [3].”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [3] 3. K. S. Novoselov et al., Nature Phys. 2, 177 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
May combine two claims.
Findingown dataIn the biased bilayer, two flat bands with energies -eV/2 and eV/2 appear, and the other two zero energy bands become dispersive inside the gap, showing band-crossing.
“In this case two flat bands with energies ÿeV=2 and eV=2 appear, similar to the case of zero magnetic field.The other two zero energy bands become dispersive inside the gap, showing the band-crossing phenomenon.”
Quote in the paperSubstantial claimMay combine two claims.
FindingreasoningIn the hole doping region, the Hartree approach underestimates the value of mc whereas the simple unscreened result overestimates it.
“In the hole doping region in Fig. 1(b), the Hartree approach underestimates the value of m c whereas the simple unscreened result overestimates it.”
Quote in the paperNot a substantial claimMay combine two claims.
Interpretationown dataThe emerged zero Hall plateau was accompanied by a huge peak in longitudinal resistivity, indicating an insulating state.
“The emerged plateau was accompanied by a huge peak in longitudinal resistivity xx , indicating an insulating state”
Quote in the paperSubstantial claimMay combine two claims.
Interpretationown dataThe asymmetry of cyclotron mass with carrier density provides a clear signature of a gap and allows its estimate.
“which provides a clear signature of a gap and allows its estimate”
Quote in the paperSubstantial claimMay combine two claims.
Study design and conductcitationThe theory was cross-checked against angle-resolved photoemission spectroscopy (ARPES) data and found excellent agreement.
“we have cross-checked our theory against angle-resolved photoemission spectroscopy (ARPES) data [8] and found excellent agreement.”
Quote in the paperNot a substantial claim0 of 1 sources checked- cites [8] 8. Theory of the gap opening within the continuum model was previously given by E. McCann, Phys. Rev. B 74, 161403 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
May combine two claims.
InterpretationreasoningZero potential difference and zero gap are expected at n=2n0 in both unscreened and screened cases.
“Zero potential difference and zero gap are expected at n 2n 0 in both unscreened and screened cases, as seen from Eqs. (1) and ( 2) and the fact that nn; 0 0.”
Quote in the paperSubstantial claim- The authors state this as an assumption: The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
May combine two claims.
InterpretationreasoningAt the zero Hall plateau the current carried around the ribbon loop is zero, which implies a diverging longitudinal resistivity at low T.
“Note that at the zero Hall plateau the current carried around the ribbon loop is zero, I 0, which implies, from the theory view point, a diverging longitudinal resistivity at low T”
Quote in the paperSubstantial claimThe quote only partly states this claim.
InterpretationreasoningThe valley asymmetry opens a gap of eV in size in the zero energy Landau levels.
“This opens a gap of eV in size.”
Quote in the paperSubstantial claimMay combine two claims. The quote only partly states this claim.
Interpretationown dataAt n=3.6×10^12 cm^-2 the gap closes and the theoretical value becomes independent of the screening assumptions.
“At this particular density the gap closes and the theoretical value becomes independent of the screening assumptions.”
Quote in the paperSubstantial claimProbably not a substantial claim: may not pass S3 (load-bearing).
Interpretationown dataA more accurate treatment of screening is needed when eV becomes of the order of t⊥.
“a more accurate treatment of screening is needed when eV becomes of the order of t ? .”
Quote in the paperNot a substantial claimMay combine two claims.
Study design and conductcitationThe coefficient 7.2×10^10 cm^-2/V is determined by the geometry of the resulting capacitor and is in agreement with values found experimentally.
“The coefficient 7:2 10 10 cm ÿ2 =V is determined by the geometry of the resulting capacitor and is in agreement with the values of n 1 found experimentally [1][2][3].”
Quote in the paperNot a substantial claim0 of 1 sources checked- cites [1][2][3]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
The authors state this as an assumption.
The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
“Assuming equal charge ÿne=2 in layers 1 and 2 of the bilayer”
The paper relies on this without support.
The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
“Note that the breakdown field for SiO 2 is 1 V=nm (i.e., 300 V for the used oxide thickness)”
The authors state this as an assumption.
The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene.
“The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene .”
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
Each contradiction between two passages listed here was confirmed by an independent check.
Laughlin is cited under the wrong reference number
MinorThe text attributes an argument to Laughlin [14], while the reference list assigns 14 to a note and lists Laughlin at 15.
“As pointed out by Laughlin [14], changing the magnetic flux through the ribbon loop by a flux quantum causes the states to move rigidly towards one edge.”
“14. The unbiased case, in the continuum approximation, was studied in Ref. [5]. 15. R. B. Laughlin, Phys. Rev. B 23, 5632 (1981).”
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834 · see citing works
Self-citationGeim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979 · see citing works
Self-citationTwo-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611 · see citing works
Self-citationExperimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435 · see citing works
Detection of individual gas molecules adsorbed on graphene
Schedin, F., Geim, A. K., Morozov, S. V., Hill, E. W., Blake, P., Katsnelson, M. I., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1967 · Cited by 8,028 · see citing works
Self-citationControlling the Electronic Structure of Bilayer Graphene
Ohta, T., Bostwick, A., Seyller, T. K., Horn, K., & Rotenberg, E. (2006) · Science · doi:10.1126/science.1130681 · Cited by 3,300 · see citing works
Halperin, B. I. (1982) · Physical Review B · doi:10.1103/physrevb.25.2185 · Cited by 2,547 · see citing works
Quantized Hall conductivity in two dimensions
Laughlin, R. B. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.23.5632 · Cited by 2,478 · see citing works
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
McCann, E., & Fal’ko, V. I. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.086805 · Cited by 2,060 · see citing works
Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
Novoselov, K. S., McCann, E., Morozov, S. V., Fal’ko, V. I., Katsnelson, M. I., Zeitler, U., Jiang, D., Schedin, F., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys245 · Cited by 1,967 · see citing works
Self-citationElectronic properties of disordered two-dimensional carbon
Peres, N. M. R., Guinea, F., & Castro Neto, A. H. (2006) · Physical Review B · doi:10.1103/physrevb.73.125411 · Cited by 1,445 · see citing works
Self-citationAsymmetry gap in the electronic band structure of bilayer graphene
McCann, E. (2006) · Physical Review B · doi:10.1103/physrevb.74.161403 · Cited by 1,275 · see citing works
Electronic states and Landau levels in graphene stacks
Guinea, F., Neto, A. H. C., & Peres, N. M. R. (2006) · Physical Review B · doi:10.1103/physrevb.73.245426 · Cited by 660 · see citing works
Self-citationTransmission through a biased graphene bilayer barrier
Nilsson, J., Castro Neto, A. H., Guinea, F., & Peres, N. M. R. (2007) · Physical Review B · doi:10.1103/physrevb.76.165416 · Cited by 145 · see citing works
Self-citation
Flagged first, then by citations
Cited by
Sorted by citations
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979 · see citing works
Self-citationThe electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803 · see citing works
“Fromthe observed harge distribution and self- onsistent al- ulations, an estimate of the band stru ture parameters and their relation with the indu ed gap an be obtained(Castro et al., 2007a).”
BackgroundInfluentialSelf-citationBoron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,148 · see citing works
Honeycomb Carbon: A Review of Graphene
Allen, M. J., Tung, V., & Kaner, R. B. (2009) · Chemical Reviews · doi:10.1021/cr900070d · Cited by 7,003 · see citing works
Raman spectroscopy in graphene
Malard, L. M., Pimenta, M. A., Dresselhaus, G., & Dresselhaus, M. S. (2009) · Physics Reports · doi:10.1016/j.physrep.2009.02.003 · Cited by 6,048 · see citing works
Schwierz, F. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.89 · Cited by 5,308 · see citing works
Graphene: the new two-dimensional nanomaterial.
Rao, C.-N.-R., Sood, A., Subrahmanyam, K., & Govindaraj, A. (2009) · Angewandte Chemie · doi:10.1002/anie.200901678 · Cited by 3,712 · see citing works
Direct observation of a widely tunable bandgap in bilayer graphene
Zhang, Y., Tang, T., Girit, Ç., Hao, Z., Martin, M. C., Zettl, A. K., Crommie, M. F., Shen, Y. R., & Wang, F. (2009) · Nature · doi:10.1038/nature08105 · Cited by 3,639 · see citing works
Graphene based materials: Past, present and future
Singh, V. V., Joung, D., Zhai, L., Das, S., Khondaker, S. I., & Seal, S. (2011) · Progress in Materials Science · doi:10.1016/j.pmatsci.2011.03.003 · Cited by 3,561 · see citing works
“In another study [190], it was reported that the electronic band gap of the bi-layer graphene can be tuned by applying electric field, which provide an opportunity to use graphene bi-layer as a tunable energy band gap semiconductor for many electronic applications like photodetectors, tera-”
BackgroundGiant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
Morozov, S. V., Novoselov, K. S., Katsnelson, M. I., Schedin, F., Elias, D. C., Jaszczak, J. A., & Geim, A. K. (2008) · Physical Review Letters · doi:10.1103/physrevlett.100.016602 · Cited by 3,468 · see citing works
Self-citationElectronic transport in two-dimensional graphene
Sarma, S. D., Adam, S., Hwang, E. H., & Rossi, E. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.407 · Cited by 3,404 · see citing works
“…external electric field perpendicular to the layers, ẑ-direction) in the electrochemical potential between the two layers, which would translate into an effective bandgap opening near the Dirac point (Castro et al., 2007; Ohta et al., 2006; Oostinga et al., 2008; Zhang et al., 2009c) Expanding Eq.”
BackgroundScience and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Ferrari, A. C., Bonaccorso, F., Fal’ko, V. I., Novoselov, K. S., Roche, S., Bøggild, P., Borini, S., Koppens, F. H. L., Palermo, V., Pugno, N. M., et al. (2014) · Nanoscale · doi:10.1039/c4nr01600a · Cited by 3,011 · see citing works
Self-citationField-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Britnell, L., Gorbachev, R., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., et al. (2012) · Science · doi:10.1126/science.1218461 · Cited by 2,562 · see citing works
Self-citationAvouris, P., Chen, Z., & Perebeinos, V. (2007) · Nature Nanotechnology · doi:10.1038/nnano.2007.300 · Cited by 2,531 · see citing works
Substrate-induced bandgap opening in epitaxial graphene
Zhou, S., Gweon, G.-H., Fedorov, A. V., First, P. N., de Heer, W. A., Lee, D. H., Guinea, F., Neto, A. H. C., & Lanzara, A. (2007) · Nature Materials · doi:10.1038/nmat2003 · Cited by 2,379 · see citing works
Self-citationGate-induced insulating state in bilayer graphene devices
Oostinga, J. B., Heersche, H. B., Liu, X., Morpurgo, A. F., & Vandersypen, L. M. K. (2007) · Nature Materials · doi:10.1038/nmat2082 · Cited by 1,646 · see citing works
Liu, H., Liu, Y., & Zhu, D. (2010) · Journal of Materials Chemistry · doi:10.1039/c0jm02922j · Cited by 1,617 · see citing works
Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening
Ni, Z., Yu, T., Lu, Y., Wang, Y., Feng, Y. P., & Shen, Z. (2008) · ACS Nano · doi:10.1021/nn800459e · Cited by 1,615 · see citing works
“Different attempts have been made by researchers, such as patterning graphene into nanoribbon,(3) forming graphene quantum dots,(2) making use of multilayer graphene sheets and applying an external electrical field.(4) According to the carbon nanotubes (CNTs) study, the strain will dramatically change the electronic s…”
MethodGraphene Bilayer with a Twist: Electronic Structure
dos Santos, J. M. B. L., Peres, N. M. R., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.256802 · Cited by 1,512 · see citing works
Self-citationTunable Bandgap in Silicene and Germanene
Ni, Z., Liu, Q., Tang, K., Zheng, J., Zhou, J., Qin, R., Gao, Z., Yu, D., & Lü, J. (2011) · Nano Letters · doi:10.1021/nl203065e · Cited by 1,448 · see citing works
Carbon Nanomaterials in Biosensors: Should You Use Nanotubes or Graphene?
Yang, W. R., Ratinac, K. R., Ringer, S. P., Thordarson, P., Gooding, J. J., & Braet, F. (2010) · Angewandte Chemie International Edition · doi:10.1002/anie.200903463 · Cited by 1,432 · see citing works
Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2012) · Chemical Society Reviews · doi:10.1039/c2cs35335k · Cited by 1,336 · see citing works
Xia, F., Farmer, D. B., Lin, Y.-M., & Avouris, P. (2010) · Nano Letters · doi:10.1021/nl9039636 · Cited by 1,322 · see citing works
Observation of Van Hove singularities in twisted graphene layers
Li, G., Luican‐Mayer, A., dos Santos, J. M. B. L., Neto, A. H. C., Reina, A., Kong, J., & Andrei, E. Y. (2009) · Nature Physics · doi:10.1038/nphys1463 · Cited by 1,239 · see citing works
Self-citationElectron-Electron Interactions in Graphene: Current Status and Perspectives
Kotov, V. N., Uchoa, B., Pereira, V. M., Guinea, F., & Neto, A. H. C. (2012) · Reviews of Modern Physics · doi:10.1103/revmodphys.84.1067 · Cited by 1,178 · see citing works
Self-citationProbing Symmetry Properties of Few-Layer MoS 2 and h-BN by Optical Second-Harmonic Generation
Li, Y., Rao, Y., Mak, K. F., et al. (2013) · Nano Letters · doi:10.1021/nl401561r · Cited by 1,174 · see citing works
Valley-dependent optoelectronics from inversion symmetry breaking
Yao, W., Xiao, D., & Niu, Q. (2008) · Physical Review B · doi:10.1103/physrevb.77.235406 · Cited by 1,158 · see citing works
Properties of graphene: a theoretical perspective
Abergel, D., Apalkov, V., Berashevich, J., Ziegler, K., & Chakraborty, T. (2010) · Advances In Physics · doi:10.1080/00018732.2010.487978 · Cited by 1,202 · see citing works
The electronic properties of bilayer graphene
McCann, E., & Koshino, M. (2013) · Reports on Progress in Physics · doi:10.1088/0034-4885/76/5/056503 · Cited by 1,217 · see citing works
Atomic Structure of Graphene on SiO2
Williams, E. D. (2007) · Cited by 1,145 · see citing works
Exfoliated Graphene Separated by Platinum Nanoparticles
Si, Y., & Samulski, E. T. (2008) · Chemistry of Materials · doi:10.1021/cm801356a · Cited by 1,126 · see citing works
Hot Carrier–Assisted Intrinsic Photoresponse in Graphene
Gabor, N. M., Song, J. C. W., Ma, Q., Nair, N. L., Taychatanapat, T., Watanabe, K., Taniguchi, T., Levitov, L. S., & Jarillo-Herrero, P. (2011) · Science · doi:10.1126/science.1211384 · Cited by 1,076 · see citing works
Colloquium: The transport properties of graphene: An introduction
Peres, N. M. R. (2010) · Reviews of Modern Physics · doi:10.1103/revmodphys.82.2673 · Cited by 1,014 · see citing works
“The main limiting factor of all graphene properties, in what concerns its application to nanoelectronics, is, most likely, the lack of a true band gap, as opposed to the biased graphene bilayer (Castro et al., 2007; McCann, 2006; McCann and Falko, 2006).”
BackgroundSelf-citationGraphene: An Emerging Electronic Material
Weiss, N. O., Zhou, H., Liao, L., Liu, Y., Jiang, S. H., Huang, Y., & Duan, X. (2012) · Advanced Materials · doi:10.1002/adma.201201482 · Cited by 904 · see citing works
Optical conductivity of graphene in the visible region of the spectrum
Stauber, T., Peres, N. M. R., & Geim, A. K. (2008) · Physical Review B · doi:10.1103/physrevb.78.085432 · Cited by 880 · see citing works
Self-citationDai, J., & Zeng, X. C. (2014) · The Journal of Physical Chemistry Letters · doi:10.1021/jz500409m · Cited by 869 · see citing works
Nobel Lecture: Graphene: Materials in the Flatland
Novoselov, K. S. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.837 · Cited by 830 · see citing works
“One could also use bilayer graphene, as a gap can be opened by applying a potential difference between the two layers (Ohta et al., 2006; Castro et al., 2007; Oostinga et al., 2007; Kuzmenko et al., 2009a, 2009b; Zhang et al., 2009; Castro et al., 2010).”
BackgroundInfluentialSelf-citationTwo-dimensional semiconductors with possible high room temperature mobility
Zhang, W., Huang, Z., Zhang, W., & Li, Y. (2014) · Nano Research · doi:10.1007/s12274-014-0532-x · Cited by 841 · see citing works
“It is possible to open a gap at the Dirac cone, but usually the gap is tiny, and required extra parameters, for example, external electric fields [5], which is not easy to fully integrate it with present semiconductor processes.”
BackgroundRao, C. N. R., Biswas, K., Subrahmanyam, K. S., & Govindaraj, A. (2009) · Journal of Materials Chemistry · doi:10.1039/b815239j · Cited by 803 · see citing works
Probing Layer Number and Stacking Order of Few‐Layer Graphene by Raman Spectroscopy
Hao, Y., Wang, Y., Wang, L., Ni, Z., Wang, Z., Wang, R., Koo, C. K., Shen, Z., & Thong, J. T. L. (2009) · Small · doi:10.1002/smll.200901173 · Cited by 792 · see citing works
Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties
Usachov, D. Y., Vilkov, O. Y., Grüneis, A., Haberer, D., Fedorov, A., Константиновна, А. В., Preobrajenski, A., Dudin, P., Barinov, A., Oehzelt, M., et al. (2011) · Nano Letters · doi:10.1021/nl2031037 · Cited by 766 · see citing works
Structure of graphene and its disorders: a review
Gao, Y., Li, L., Lee, W. B., & Ng, M. C. (2018) · Science and Technology of Advanced Materials · doi:10.1080/14686996.2018.1494493 · Cited by 771 · see citing works
“The band structure of bilayer graphene can be tuned by applying an electric field [114,115], providing appropriate substrates [116] or chemical modulations [117,118], which is expected to attract interests”
BackgroundBlack Phosphorus: Narrow Gap, Wide Applications
Castellanos-Gómez, A. (2015) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.5b01686 · Cited by 754 · see citing works
Graphene, hexagonal boron nitride, and their heterostructures: properties and applications
Wang, J., Ma, F., & Sun, M. (2017) · RSC Advances · doi:10.1039/c7ra00260b · Cited by 740 · see citing works
Two-dimensional materials and their prospects in transistor electronics
Schwierz, F., Pezoldt, J., & Granzner, R. (2015) · Nanoscale · doi:10.1039/c5nr01052g · Cited by 728 · see citing works
The shear mode of multilayer graphene
Tan, P., Han, W. P., Zhao, W., Wu, Z., Chang, K., Wang, H., Wang, Y. F., Bonini, N., Marzari, N., Pugno, N. M., et al. (2012) · Nature Materials · doi:10.1038/nmat3245 · Cited by 716 · see citing works
“[3] Castro, E.”
BackgroundAtomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene
Yoo, H., Engelke, R., Carr, S., Fang, S., Zhang, K., Cazeaux, P., Sung, S. H., Hovden, R., Tsen, A. W., Taniguchi, T., et al. (2019) · Nature Materials · doi:10.1038/s41563-019-0346-z · Cited by 719 · see citing works
Gas sensors using carbon nanomaterials: A review
Llobet, E. (2012) · Sensors and Actuators B Chemical · doi:10.1016/j.snb.2012.11.014 · Cited by 695 · see citing works
Topological valley transport at bilayer graphene domain walls
Ju, L., Shi, Z., Nair, N., Lv, Y., Jin, C., Velasco, J., Ojeda-Aristizabal, C., Bechtel, H. A., Martin, M. C., Zettl, A., et al. (2015) · Nature · doi:10.1038/nature14364 · Cited by 680 · see citing works
Graphene-related nanomaterials: tuning properties by functionalization
Tang, Q. H., Zhou, Z. P., & Chen, Z. (2013) · Nanoscale · doi:10.1039/c3nr33218g · Cited by 666 · see citing works
Electronic and Magnetic Properties of Quasifreestanding Graphene on Ni
Varykhalov, A., Sánchez‐Barriga, J., Shikin, A. M., Biswas, C., Vescovo, E., Rybkin, A. G., Marchenko, D. E., & Rader, O. (2008) · Physical Review Letters · doi:10.1103/physrevlett.101.157601 · Cited by 665 · see citing works
Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
Mak, K. F., Lui, C. H., Shan, J., & Heinz, T. F. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.256405 · Cited by 638 · see citing works
Open and Closed Edges of Graphene Layers
Liu, Z., Suenaga, K., Harris, P. J. F., & Iijima, S. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.015501 · Cited by 622 · see citing works
Zhang, A., & Lieber, C. M. (2015) · Chemical Reviews · doi:10.1021/acs.chemrev.5b00608 · Cited by 629 · see citing works
Continuum model of the twisted graphene bilayer
dos Santos, J. M. B. L., Peres, N. M. R., & Neto, A. H. C. (2012) · Physical Review B · doi:10.1103/physrevb.86.155449 · Cited by 608 · see citing works
Self-citationThe electronic properties of bilayer graphene
McCann, E., & Koshino, M. (2013) · Lancaster EPrints (Lancaster University) · Cited by 595 · see citing works
Observation of an electrically tunable band gap in trilayer graphene
Lui, C. H., Li, Z., Mak, K. F., et al. (2011) · Nature Physics · doi:10.1038/nphys2102 · Cited by 596 · see citing works
Kim, K., Coh, S., Tan, L. Z., Regan, W., Yuk, J. M., Chatterjee, E., Crommie, M. F., Cohen, M. L., Louie, S. G., & Zettl, A. K. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.246103 · Cited by 586 · see citing works
Graphene and Graphene-like Two-Dimensional Materials in Photodetection: Mechanisms and Methodology
Sun, Z., & Chang, H. (2014) · ACS Nano · doi:10.1021/nn500508c · Cited by 583 · see citing works
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 571 · see citing works
Fabrication, Mechanical Properties, and Biocompatibility of Graphene-Reinforced Chitosan Composites
Fan, H., Wang, L., Zhao, K., et al. (2010) · Biomacromolecules · doi:10.1021/bm100470q · Cited by 554 · see citing works
Kumar, A., Sharma, K., & Dixit, A. R. (2018) · Journal of Materials Science · doi:10.1007/s10853-018-03244-3 · Cited by 550 · see citing works
Correlated states in twisted double bilayer graphene
Shen, C., Chu, Y., Wu, Q., Li, N., Wang, S., Zhao, Y., Tang, J., Liu, J., Tian, J., Watanabe, K., et al. (2020) · Nature Physics · doi:10.1038/s41567-020-0825-9 · Cited by 540 · see citing works
Riedl, C., Coletti, C., & Starke, U. (2010) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/43/37/374009 · Cited by 527 · see citing works
Strain engineering in semiconducting two-dimensional crystals
Roldán, R., Castellanos-Gómez, A., Cappelluti, E., & Guinea, F. (2015) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/27/31/313201 · Cited by 601 · see citing works
Self-citationGraphene Transistors: Status, Prospects, and Problems
Schwierz, F. (2013) · Proceedings of the IEEE · doi:10.1109/jproc.2013.2257633 · Cited by 518 · see citing works
“Moreover, bandstructure calculations for GNRs and bilayer graphene reveal a high degree of symmetry of the conduction and valence bands pointing to similar effective electron and hole masses [51], [59].”
BackgroundPhosphorene and Phosphorene‐Based Materials – Prospects for Future Applications
Batmunkh, M., Bat‐Erdene, M., & Shapter, J. G. (2016) · Advanced Materials · doi:10.1002/adma.201602254 · Cited by 494 · see citing works
Colloquium : Spintronics in graphene and other two-dimensional materials
Avşar, A., Ochoa, H., Guinea, F., Özyilmaz, B., van Wees, B. J., & Vera-Marun, I. J. (2020) · Reviews of Modern Physics · doi:10.1103/revmodphys.92.021003 · Cited by 474 · see citing works
“This degeneracy is protected by the D3d point group symmetry of the crystal but it can be removed by applying a perpendicular electric field (Castro et al., 2007).”
BackgroundSelf-citationCommensuration and interlayer coherence in twisted bilayer graphene
Melé, E. J. (2010) · Physical Review B · doi:10.1103/physrevb.81.161405 · Cited by 488 · see citing works
Zhu, W., Perebeinos, V., Freitag, M., et al. (2009) · Physical Review B · doi:10.1103/physrevb.80.235402 · Cited by 485 · see citing works
“ture increases, we find that the mobility decreases for mono-layer graphene due to the surface polar substrate scattering as in ref. [11], while it increases almost linearly with temperature (see Eq. (6)) for bilayer/tri-layer graphene. This is attributed to the fact that Coulomb scattering decreases with temperature…”
BackgroundInfluentialTrilayer graphene is a semimetal with a gate-tunable band overlap
Craciun, M. F., Russo, S., Yamamoto, M., Oostinga, J. B., Morpurgo, A. F., & Tarucha, S. (2009) · Nature Nanotechnology · doi:10.1038/nnano.2009.89 · Cited by 453 · see citing works
Electronic properties of graphene-based bilayer systems
Rozhkov, A. V., Sboychakov, A. O., Rakhmanov, A. L., & Nori, F. (2016) · Physics Reports · doi:10.1016/j.physrep.2016.07.003 · Cited by 450 · see citing works
“Experiments confirmed the existence of this gap [46, 51, 54, 57, 58, 59, 60].”
BackgroundResultInfluentialWafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
Lee, S., Lee, K., & Zhong, Z. (2010) · Nano Letters · doi:10.1021/nl1029978 · Cited by 442 · see citing works
Nobel Lecture: Random walk to graphene
Geim, A. K. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.851 · Cited by 436 · see citing works
Self-citationFormation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition
Yan, K., Peng, H., Zhou, Y. R., et al. (2011) · Nano Letters · doi:10.1021/nl104000b · Cited by 421 · see citing works
Band structure of A B C -stacked graphene trilayers
Zhang, F., Sahu, B. R., Min, H., & MacDonald, A. H. (2010) · Physical Review B · doi:10.1103/physrevb.82.035409 · Cited by 418 · see citing works
Valley Chern numbers and boundary modes in gapped bilayer graphene
Zhang, F., MacDonald, A. H., & Melé, E. J. (2013) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1308853110 · Cited by 407 · see citing works
“∓ ffiffiffiffiffiffiffiffi 1∓ξ q eið1−μÞνφ 1 CCCCCCCA ; [5] + V”
Broken-Symmetry States in Doubly Gated Suspended Bilayer Graphene
Weitz, R. T., Allen, M., Feldman, B. E., Martin, J., & Yacoby, A. (2010) · Science · doi:10.1126/science.1194988 · Cited by 403 · see citing works
High frequency electric field induced nonlinear effects in graphene
Глазов, М. М., & Ganichev, S. D. (2013) · Physics Reports · doi:10.1016/j.physrep.2013.10.003 · Cited by 428 · see citing works
Two-dimensional heterostructures: fabrication, characterization, and application
Wang, H., Liu, F., Fu, W., et al. (2014) · Nanoscale · doi:10.1039/c4nr03435j · Cited by 404 · see citing works
Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices
Lin, Y.-M., & Avouris, P. (2008) · Nano Letters · doi:10.1021/nl080241l · Cited by 396 · see citing works
High frequency electric field induced nonlinear effects in graphene
Глазов, М. М., & Ganichev, S. (2014) · University of Regensburg Publication Server (University of Regensburg) · Cited by 412 · see citing works
Fang, X., Yu, X.-X., Zheng, H., et al. (2015) · Physics Letters A · doi:10.1016/j.physleta.2015.06.063 · Cited by 373 · see citing works
Spin–layer locking effects in optical orientation of exciton spin in bilayer WSe2
Jones, A. M., Yu, H., Ross, J., Klement, P., Ghimire, N., Yan, J., Mandrus, D. G., Yao, W., & Xu, X. (2014) · Nature Physics · doi:10.1038/nphys2848 · Cited by 361 · see citing works
Efficient electrical control of thin-film black phosphorus bandgap
Deng, B., Tran, V., Xie, Y., Jiang, H., Li, C., Guo, Q., Wang, X., Tian, H., Koester, S. J., Wang, H., et al. (2017) · Nature Communications · doi:10.1038/ncomms14474 · Cited by 347 · see citing works
Engineering symmetry breaking in 2D layered materials
Du, L., Hasan, T., Castellanos-Gómez, A., Liu, G.-B., Yao, Y., Lau, C. N., & Sun, Z. (2021) · Nature Reviews Physics · doi:10.1038/s42254-020-00276-0 · Cited by 363 · see citing works
Liu, Q., Li, L., Li, Y., Gao, Z., Chen, Z., & Lü, J. (2012) · The Journal of Physical Chemistry C · doi:10.1021/jp307124d · Cited by 339 · see citing works
Rozhkov, A. V., Giavaras, G., Bliokh, Y. P., Freilikher, V., & Nori, F. (2011) · Physics Reports · doi:10.1016/j.physrep.2011.02.002 · Cited by 365 · see citing works
“Nanoribbons (width ∼15 nm) [19] 200 BN-h/Cu(111) substrate [27] 53/11 SiC substrate [28] 260 External square superlattice [29] 65 Strain engineering [22] 300 Adsorption of molecules [30] 2 × 103 Graphene covered by H2O/NH3 [24] 18/11 30/42 Nanoribbons (width ∼30 nm) [31] 50 Electrical gates [26] 250 Selective doping (…”
BackgroundSynthesis, Assembly, and Applications of Hybrid Nanostructures for Biosensing
Zhang, S., Geryak, R. D., Geldmeier, J. A., Kim, S., & Tsukruk, V. V. (2017) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00088 · Cited by 340 · see citing works
Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides
Bhattacharyya, S., & Singh, A. K. (2012) · Physical Review B · doi:10.1103/physrevb.86.075454 · Cited by 328 · see citing works
Angle-Resolved Raman Imaging of Interlayer Rotations and Interactions in Twisted Bilayer Graphene
Havener, R. W., Zhuang, H. L., Brown, L., et al. (2012) · Nano Letters · doi:10.1021/nl301137k · Cited by 334 · see citing works
Kuzmenko, A. B., Crassee, I., van der Marel, D., Blake, P., & Novoselov, K. S. (2009) · Physical Review B · doi:10.1103/physrevb.80.165406 · Cited by 328 · see citing works
Self-citationField-effect transistors based on two-dimensional materials for logic applications
Wang, X., Shi, Y., & Zhang, R. (2013) · Chinese Physics B · doi:10.1088/1674-1056/22/9/098505 · Cited by 327 · see citing works
Broken-symmetry states and divergent resistance in suspended bilayer graphene
Feldman, B. E., Martin, J., & Yacoby, A. (2009) · Nature Physics · doi:10.1038/nphys1406 · Cited by 326 · see citing works
Tuneable electronic properties in graphene
Craciun, M. F., Russo, S., Yamamoto, M., & Tarucha, S. (2011) · Nano Today · doi:10.1016/j.nantod.2010.12.001 · Cited by 321 · see citing works
Electronic properties of bilayer and multilayer graphene
Nilsson, J., Neto, A. H. C., Guinea, F., & Peres, N. M. R. (2008) · Physical Review B · doi:10.1103/physrevb.78.045405 · Cited by 307 · see citing works
Self-citationMak, K. F., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.104.176404 · Cited by 315 · see citing works
Tunable Stress and Controlled Thickness Modification in Graphene by Annealing
Ni, Z. H., Wang, H. M., Ma, Y., Kasim, J., Wu, Y. H., & Shen, Z. X. (2008) · ACS Nano · doi:10.1021/nn800031m · Cited by 342 · see citing works
“Researchers have successfully developed an energy gap in graphene by patterning it into nanoribbon,(5) forming quantum dots 4 or making use of mutilayer graphene sheets with or without the application of an external electrical field.(6,7) Besides global back gates,(8,9) top local gates(10-12) have also been employed t…”
MethodKim, K., Lee, Z., Malone, B. D., Chan, K. T., Alemán, B., Regan, W., Gannett, W., Crommie, M. F., Cohen, M. L., & Zettl, A. K. (2011) · Physical Review B · doi:10.1103/physrevb.83.245433 · Cited by 315 · see citing works
Determination of the electronic structure of bilayer graphene from infrared spectroscopy
Zhang, L. M., Li, Z. Q., Basov, D. N., Fogler, M. M., Hao, Z., & Martin, M. C. (2008) · Physical Review B · doi:10.1103/physrevb.78.235408 · Cited by 303 · see citing works
- Authors
- Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C.
- Affiliations
- Universidade do Porto (PT)
- University of Manchester (GB)
- University of Minho (PT)
- Boston University (US)
- Consejo Superior de Investigaciones Científicas (ES)
- ORCID
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2007-11-20
- Volume
- 99
- Issue
- 21
- Pages
- 216802-216802
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2113467957
- Cited by
- 2,033
- References
- 14
- Citations by year
- 2026: 54 · 2025: 60 · 2024: 62 · 2023: 68 · 2022: 85 · 2021: 101 · 2020: 134 · 2019: 102 · 2018: 95 · 2017: 121 · 2016: 134 · 2015: 130 · 2014: 142 · 2013: 146 · 2012: 145
- FWCI
- 55.56
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Physical Review Letters (publishedVersion)
- PubMed (publishedVersion)
- Research Explorer (The University of Manchester) (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- DIGITAL.CSIC (Spanish National Research Council (CSIC)) (submittedVersion, other-oa)
- arXiv (Cornell University)
- Bulletin of the American Physical Society
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum and electron transport phenomena
- Keywords
- bilayer graphene, electric field effects, band gap tuning, gate bias, Shubnikov-de Haas effect, cyclotron mass, tight-binding model, quantum Hall effect, electron density
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Claims read by deepseek-v4.1-flash under definition version 3 (extract-v3) on 2026-10-11.
Classified by jev-1.13-20260917 (gold-guideline-v0.2) on 2026-10-11.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
