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Gap opening in graphene by shear strain
Open accessAbstract
We exploit the concept of strain-induced band-structure engineering in graphene through the calculation of its electronic properties under uniaxial, shear, and combined uniaxial-shear deformations. We show that by combining shear deformations to uniaxial strains it is possible modulate the graphene energy-gap value from zero up to 0.9 eV. Interestingly enough, the use of a shear component allows for a gap opening at moderate absolute deformation, safely smaller than the graphene failure strain.
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Cites
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Cited by
Johari, P., & Shenoy, V. B. (2012) · ACS Nano · doi:10.1021/nn301320r · Cited by 992
Graphene-based smart materials
Yu, X., Cheng, H., Zhang, M., Zhao, Y., Qu, L., & Shi, G. (2017) · Nature Reviews Materials · doi:10.1038/natrevmats.2017.46 · Cited by 796
Hasegawa, Y., & Kishigi, K. (2012) · Physical Review B · doi:10.1103/physrevb.86.165430 · Cited by 23
Metadata
- Authors
- Cocco, G., Cadelano, E., & Colombo, L.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2010-06-22
- Volume
- 81
- Issue
- 24
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2054827022
- Cited by
- 360
- References
- 1
- FWCI
- 10.50
- Type
- journal article
- Language
- en
- Open access
- green
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- Cocco, G., Cadelano, E., & Colombo, L. (2010). Gap opening in graphene by shear strain. Physical Review B. https://doi.org/10.1103/physrevb.81.241412
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