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Localized edge states in two-dimensional topological insulators: Ultrathin Bi films

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Wada, M., Murakami, S., Freimuth, F., Bihlmayer, G.·2011·Physical Review B

Abstract

We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well.

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Metadata

Authors
Wada, M., Murakami, S., Freimuth, F., & Bihlmayer, G.
Venue
Physical Review B
Published
2011-03-21
Volume
83
Issue
12
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
OpenAlex
W2088253963
Cited by
368
References
8
FWCI
11.82
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Localized edge states in two-dimensional topological insulators: Ultrathin Bi films. https://app.cochat.ai/papers/10.1103/physrevb.83.121310
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Wada, M., Murakami, S., Freimuth, F., & Bihlmayer, G. (2011). Localized edge states in two-dimensional topological insulators: Ultrathin Bi films. Physical Review B. https://doi.org/10.1103/physrevb.83.121310

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.