The DOI matches its Crossref record; 100 of the 100 references it cites were found in a registry or an index.
Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2
Open accessAbstract
In this paper we present a paradigmatic tight-binding model for single-layer as well as multilayered semiconducting MoS${}_{2}$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can be reproduced in terms of a tight-binding modeling of the single-layer hopping terms by simply adding the proper interlayer hoppings ruled by the chalcogenide atoms. We show that such a tight-binding model makes it possible to understand and control in a natural way the transition between a direct-gap band structure, in single-layer systems, and an indirect gap in multilayer compounds in terms of a momentum/orbital selective interlayer splitting of the relevant valence and conduction bands. The model represents also a suitable playground to investigate in an analytical way strain and finite-size effects.
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Cites
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Cited by
Local Strain Engineering in Atomically Thin MoS2
Castellanos-Gomez, A., Roldán, R., Cappelluti, E., Buscema, M., Guinea, F., van der Zant, H. S. J., & Steele, G. A. (2013) · Nano Letters · doi:10.1021/nl402875m · Cited by 1,309
Self-citationk · p theory for two-dimensional transition metal dichalcogenide semiconductors
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Strain engineering in semiconducting two-dimensional crystals
Roldán, R., Castellanos-Gomez, A., Cappelluti, E., & Guinea, F. (2015) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/27/31/313201 · Cited by 527
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Metadata
- Authors
- Cappelluti, E., Roldán, R., Silva-Guillén, J. A., Ordejón, P., & Guinea, F.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2013-08-08
- Volume
- 88
- Issue
- 7
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2021929784
- Cited by
- 431
- References
- 100
- FWCI
- 18.06
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Cappelluti, E., Roldán, R., Silva-Guillén, J. A., Ordejón, P., & Guinea, F. (2013). Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2. Physical Review B. https://doi.org/10.1103/physrevb.88.075409
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