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Electronic structure of the negatively charged silicon-vacancy center in diamond
Open accessAbstract
The negatively charged silicon-vacancy (SiV${}^{\ensuremath{-}}$) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\ensuremath{\langle}111\ensuremath{\rangle}$ aligned split-vacancy structure with ${\mathrm{D}}_{3\mathrm{d}}$ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.
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Cites
The nitrogen-vacancy colour centre in diamond
Doherty, M. W., Manson, N. B., Delaney, P., Jelezko, F., Wrachtrup, J., & Hollenberg, L. C. L. (2013) · Physics Reports · doi:10.1016/j.physrep.2013.02.001 · Cited by 2,866
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An integrated diamond nanophotonics platform for quantum-optical networks
Sipahigil, A., Evans, R. E., Sukachev, D. D., Burek, M. J., Borregaard, J., Bhaskar, M. K., Nguyen, C. T., Pacheco, J. L., Atikian, H. A., Meuwly, C., et al. (2016) · Science · doi:10.1126/science.aah6875 · Cited by 844
Self-citationAharonovich, I., & Neu, E. (2014) · Advanced Optical Materials · doi:10.1002/adom.201400189 · Cited by 359
Bassett, L. C., Alkauskas, A., Exarhos, A. L., & Fu, K. C. (2018) · Nanophotonics · doi:10.1515/nanoph-2019-0211 · Cited by 112
Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology
Spindlberger, L., Csóré, A., Thiering, G., Putz, S., Karhu, R., Hassan, J. U., Son, N. T., Fromherz, T., Gali, A., & Trupke, M. (2019) · Physical Review Applied · doi:10.1103/physrevapplied.12.014015 · Cited by 82
Metadata
- Authors
- Rogers, L. J., Jahnke, K. D., Doherty, M. W., Dietrich, A., McGuinness, L. P., Müller, C., Teraji, T., Sumiya, H., Isoya, J., Manson, N. B., & Jelezko, F.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2014-06-02
- Volume
- 89
- Issue
- 23
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2043003103
- Cited by
- 227
- References
- 1
- FWCI
- 9.08
- Type
- journal article
- Language
- en
- Open access
- hybrid
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- Rogers, L. J., Jahnke, K. D., Doherty, M. W., Dietrich, A., McGuinness, L. P., Müller, C., Teraji, T., Sumiya, H., Isoya, J., Manson, N. B., & Jelezko, F. (2014). Electronic structure of the negatively charged silicon-vacancy center in diamond. Physical Review B. https://doi.org/10.1103/physrevb.89.235101
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