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Mott Relation for Anomalous Hall and Nernst Effects inGa1−xMnxAsFerromagnetic Semiconductors
Open accessAbstract
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.
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Cites
Karplus, R., & Luttinger, J. M. (1954) · Physical Review · doi:10.1103/physrev.95.1154 · Cited by 1,737
The spontaneous hall effect in ferromagnetics I
Smit, J. (1955) · Physica · doi:10.1016/s0031-8914(55)92596-9 · Cited by 778
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Large anomalous Nernst effect at room temperature in a chiral antiferromagnet
Ikhlas, M., Tomita, T., Koretsune, T., Suzuki, M.-T., Nishio-Hamane, D., Arita, R., Otani, Y., & Nakatsuji, S. (2017) · Nature Physics · doi:10.1038/nphys4181 · Cited by 746
Giant anomalous Nernst effect and quantum-critical scaling in a ferromagnetic semimetal
Sakai, A., Mizuta, Y. P., Nugroho, A. A., Sihombing, R., Koretsune, T., Suzuki, M.-T., Takemori, N., Ishii, R., Nishio-Hamane, D., Arita, R., et al. (2018) · Nature Physics · doi:10.1038/s41567-018-0225-6 · Cited by 600
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Tian, Y., Ye, L., & Jin, X. (2009) · Physical Review Letters · doi:10.1103/physrevlett.103.087206 · Cited by 567
Metadata
- Authors
- Pu, Y., Chiba, D., Matsukura, F., Ohno, H., & Shi, J.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2008-09-12
- Volume
- 101
- Issue
- 11
- Pages
- 117208-117208
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1972630207
- Cited by
- 272
- References
- 2
- FWCI
- 4.06
- Type
- journal article
- Language
- en
- Open access
- green
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- Pu, Y., Chiba, D., Matsukura, F., Ohno, H., & Shi, J. (2008). Mott Relation for Anomalous Hall and Nernst Effects inGa1−xMnxAsFerromagnetic Semiconductors. Physical Review Letters. https://doi.org/10.1103/physrevlett.101.117208
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