The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments
Abstract
A freestanding single layer of hexagonal boron nitride (h-BN) has been successfully fabricated by controlled energetic electron irradiation through a layer-by-layer sputtering process. We have successfully resolved atomic defects in h-BN with triangle shapes by means of an aberration corrected high-resolution transmission electron microscopy with exit-wave reconstruction. Boron monovacancies are found to be preferably formed and the dominating zigzag-type edges are proved to be nitrogen terminated.
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Citations
Cites
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
Song, L., Ci, L., Lu, H., Sorokin, P. B., Jin, C., Ni, J., Kvashnin, A. G., Kvashnin, D. G., Lou, J., Yakobson, B. I., et al. (2010) · Nano Letters · doi:10.1021/nl1022139 · Cited by 2,689
Self-citationZhao, J., & Chen, Z. (2017) · Journal of the American Chemical Society · doi:10.1021/jacs.7b05213 · Cited by 1,249
Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride
Roy, S., Zhang, X., Puthirath, A. B., Meiyazhagan, A., Bhattacharyya, S., Rahman, M. M., Babu, G., Susarla, S., Saju, S. K., Tran, M. K., et al. (2021) · Advanced Materials · doi:10.1002/adma.202101589 · Cited by 871
Graphene Analogues of BN: Novel Synthesis and Properties
Nag, A., Raidongia, K., Hembram, K. P. S. S., Datta, R., Waghmare, U. V., & Rao, C. N. R. (2010) · ACS Nano · doi:10.1021/nn9018762 · Cited by 786
Ding, Y., Wang, Y., Ni, J., Shi, L., Shi, S., & Tang, W. (2011) · Physica B: Condensed Matter · doi:10.1016/j.physb.2011.03.044 · Cited by 758
Metadata
- Authors
- Jin, C., Lin, F., Suenaga, K., & Iijima, S.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2009-05-14
- Volume
- 102
- Issue
- 19
- Pages
- 195505-195505
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2022452538
- Cited by
- 1,152
- References
- 1
- FWCI
- 27.44
- Type
- journal article
- Language
- en
- Open access
- closed
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- Jin, C., Lin, F., Suenaga, K., & Iijima, S. (2009). Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments. Physical Review Letters. https://doi.org/10.1103/physrevlett.102.195505
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