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Defect Scattering in Graphene
Open accessAbstract
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as is evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is 4 times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e(2)/pih, the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in midgap states.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Raman spectroscopy as a versatile tool for studying the properties of graphene
Ferrari, A. C., & Basko, D. M. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.46 · Cited by 7,405
Grapheneviasonication assisted liquid-phase exfoliation
Ciesielski, A., & Samorì, P. (2014) · Chem. Soc. Rev. · doi:10.1039/c3cs60217f · Cited by 1,207
Raman Techniques: Fundamentals and Frontiers
Jones, R. R., Hooper, D. C., Zhang, L., Wolverson, D., & Valev, V. K. (2019) · Nanoscale Research Letters · doi:10.1186/s11671-019-3039-2 · Cited by 804
Allahbakhsh, A., & Arjmand, M. (2019) · Carbon · doi:10.1016/j.carbon.2019.04.009 · Cited by 180
Metadata
- Authors
- Chen, J.-H., Cullen, W. G., Jang, C., Fuhrer, M. S., & Williams, E. D.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2009-06-12
- Volume
- 102
- Issue
- 23
- Pages
- 236805-236805
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2036915949
- Cited by
- 653
- References
- 2
- FWCI
- 25.68
- Type
- journal article
- Language
- en
- Open access
- green
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- Chen, J.-H., Cullen, W. G., Jang, C., Fuhrer, M. S., & Williams, E. D. (2009). Defect Scattering in Graphene. Physical Review Letters. https://doi.org/10.1103/physrevlett.102.236805
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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