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Cited by 258

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In-Plane Transport and Enhanced Thermoelectric Performance in Thin Films of the Topological InsulatorsBi2Te3andBi2Se3

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Ghaemi, Pouyan, Mong, Roger S. K., Moore, J. E.·2010·Physical Review Letters

Abstract

Several small-band-gap semiconductors are now known to protect metallic surface states as a consequence of the topology of the bulk electron wave functions. The known "topological insulators" with this behavior include the important thermoelectric materials Bi₂Te₃ and Bi₂Se₃, whose surfaces are observed in photoemission experiments to have an unusual electronic structure with a single Dirac cone. We study in-plane (i.e., horizontal) transport in thin films made of these materials. The surface states from top and bottom surfaces hybridize, and conventional diffusive transport predicts that the tunable hybridization-induced band gap leads to increased thermoelectric performance at low temperatures. Beyond simple diffusive transport, the conductivity shows a crossover from the spin-orbit-induced antilocalization at a single surface to ordinary localization.

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Metadata

Authors
Ghaemi, P., Mong, R. S. K., & Moore, J. E.
Venue
Physical Review Letters
Published
2010-10-11
Volume
105
Issue
16
Pages
166603-166603
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W1964450226
Cited by
258
References
7
FWCI
10.17
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: In-Plane Transport and Enhanced Thermoelectric Performance in Thin Films of the Topological InsulatorsBi2Te3andBi2Se3. https://app.cochat.ai/papers/10.1103/physrevlett.105.166603
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Ghaemi, P., Mong, R. S. K., & Moore, J. E. (2010). In-Plane Transport and Enhanced Thermoelectric Performance in Thin Films of the Topological InsulatorsBi2Te3andBi2Se3. Physical Review Letters. https://doi.org/10.1103/physrevlett.105.166603

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