Quantum Hall effect from the topological surface states of strained bulk HgTe.
Open accessAbstract
We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.
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In real materials, an integer factor may be applied for G0 due to degeneracy, such as graphene with a factor of 4 from spin and valley degeneracies.
“In real materials, an integer factor may be applied for G 0 due to degeneracy, such as graphene with a factor of 4 that originates from spin and valley degeneracies (216,263).”
From Transport of Topological Semimetals (2019) · cites this paper as [263]
Appendix C (p. 5) says that a twofold Landau-level degeneracy in HgTe affects which Hall plateaus appear, supporting the general point that degeneracy matters. The paper mentions graphene in the main text (p. 2), but does not state that graphene has a factor of four arising from spin and valley degeneracies; that specific example is unsupported by this source. (LLM, conf=0.84)
Experimental — accuracy not yet measuredThe concept for QHE for 2D Dirac fermions has been established for graphene and topological insulators.
“The concept for QHE for 2D Dirac fermions has already been established for graphene and topological insulators (216,(263)(264)(265).”
From Transport of Topological Semimetals (2019) · cites this paper as [263]
This half-integer quantization can be understood in terms of a Berry phase of π for relativistic fermions and has been observed in graphene, zero-gap HgTe quantum wells, and 3D topological insulators.
“This half-integer quantization can also be understood in terms of a Berry phase of π for relativistic fermions and has been observed in graphene (216, 263), zero-gap HgTe quantum wells (266), and 3D topological insulators (264,265).”
From Transport of Topological Semimetals (2019) · cites this paper as [263]
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Cites
The electronic properties of graphene
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Quantum Spin Hall Insulator State in HgTe Quantum Wells
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Self-citationSuperconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator
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Self-citationA topological Dirac insulator in a quantum spin Hall phase
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Weyl and Dirac semimetals in three-dimensional solids
Armitage, N. P., Mele, E. J., & Vishwanath, A. (2018) · Reviews of Modern Physics · doi:10.1103/revmodphys.90.015001 · Cited by 4,528 · see citing works
“Although in principle the strong interactions proposed by Abrikosov, 1974 should exist in the classic HgTe and α-Sn systems, such effects were never observed.”
BackgroundInfluentialTopological Insulator Materials
Ando, Y. (2013) · Journal of the Physical Society of Japan · doi:10.7566/jpsj.82.102001 · Cited by 1,789 · see citing works
Xu, Y., Miotkowski, I., Liu, C., Tian, J., Nam, H., Alidoust, N., Hu, J., Shih, C.-K., Hasan, M. Z., & Chen, Y. P. (2014) · Nature Physics · doi:10.1038/nphys3140 · Cited by 430 · see citing works
Self-citationTransport of Topological Semimetals
Hu, J., Xu, S.-Y., Ni, N., & Mao, Z. (2019) · Annual Review of Materials Research · doi:10.1146/annurev-matsci-070218-010023 · Cited by 265 · see citing works
Berry phase of nonideal Dirac fermions in topological insulators
Taskin, A. A., & Ando, Y. (2011) · Physical Review B · doi:10.1103/physrevb.84.035301 · Cited by 199 · see citing works
Schumann, T., Galletti, L., Kealhofer, D. A., Kim, H., Goyal, M., & Stemmer, S. (2018) · Physical Review Letters · doi:10.1103/physrevlett.120.016801 · Cited by 185 · see citing works
Bulmash, D., Liu, C.-X., & Qi, X.-L. (2014) · Physical Review B · doi:10.1103/physrevb.89.081106 · Cited by 144 · see citing works
Self-citationWeyl and Dirac Semimetals in Three Dimensional Solids
Armitage, N. P., Mele, E. J., & Vishwanath, A. (2017) · arXiv
“Although in principle the strong interactions proposed by Abrikosov, 1974 should exist in the classic HgTe and α-Sn systems, such effects were never observed.”
BackgroundInfluential
- Authors
- Brüne, C., Liu, C. X., Novik, E. G., Hankiewicz, E. M., Buhmann, H., Chen, Y. L., Qi, X. L., Shen, Z. X., Zhang, S. C., & Molenkamp, L. W.
- Affiliations
- University of Würzburg (DE)
- Stanford University (US)
- ORCID
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2011-03-22
- Volume
- 106
- Issue
- 12
- Pages
- 126803-126803
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2033983076
- Cited by
- 508
- References
- 9
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- FWCI
- 25.18
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Licence
- Locations
- Physical Review Letters (publishedVersion)
- PubMed (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- arXiv (Cornell University)
- Funders
- U.S. Department of Energy
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum and electron transport phenomena
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Surface and Thin Film Phenomena
- Keywords
- quantum Hall effect, topological insulators, HgTe, topological surface states, Dirac cones, CdTe substrates, band gap opening, two-dimensional surface states, low-temperature transport
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