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Direct Measurement of the Thickness-Dependent Electronic Band Structure ofMoS2Using Angle-Resolved Photoemission Spectroscopy
Abstract
We report on the evolution of the thickness-dependent electronic band structure of the two-dimensional layered-dichalcogenide molybdenum disulfide (MoS2). Micrometer-scale angle-resolved photoemission spectroscopy of mechanically exfoliated and chemical-vapor-deposition-grown crystals provides direct evidence for the shifting of the valence band maximum from Γ to K, for the case of MoS2 having more than one layer, to the case of single-layer MoS2, as predicted by density functional theory. This evolution of the electronic structure from bulk to few-layer to monolayer MoS2 had earlier been predicted to arise from quantum confinement. Furthermore, one of the consequences of this progression in the electronic structure is the dramatic increase in the hole effective mass, in going from bulk to monolayer MoS2 at its Brillouin zone center, which is known as the cause for the decreased carrier mobility of the monolayer form compared to that of bulk MoS2.
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Cites
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Spin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Liu, G.-B., Xiao, D., Yao, Y., Xu, X., & Yao, W. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00301b · Cited by 698
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures
Pierucci, D., Henck, H., Avila, J., Balan, A., Naylor, C. H., Patriarche, G., Dappe, Y. J., Silly, M. G., Sirotti, F., Johnson, A. T. C., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b00609 · Cited by 365
Metadata
- Authors
- Jin, W., Yeh, P.-C., Zaki, N., Zhang, D., Sadowski, J. T., Al-Mahboob, A., van der Zande, A. M., Chenet, D. A., Dadap, J. I., Herman, I. P., Sutter, P., Hone, J., & Osgood, R. M.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2013-09-03
- Volume
- 111
- Issue
- 10
- Pages
- 106801-106801
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2335667480
- Cited by
- 540
- References
- 1
- FWCI
- 21.76
- Type
- journal article
- Language
- en
- Open access
- closed
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- Jin, W., Yeh, P.-C., Zaki, N., Zhang, D., Sadowski, J. T., Al-Mahboob, A., van der Zande, A. M., Chenet, D. A., Dadap, J. I., Herman, I. P., Sutter, P., Hone, J., & Osgood, R. M. (2013). Direct Measurement of the Thickness-Dependent Electronic Band Structure ofMoS2Using Angle-Resolved Photoemission Spectroscopy. Physical Review Letters. https://doi.org/10.1103/physrevlett.111.106801
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