The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
Large-Gap Quantum Spin Hall Insulators in Tin Films
Open accessAbstract
The search for large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Γ point, similar to the case of a HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.
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Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal
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Metadata
- Authors
- Xu, Y., Yan, B., Zhang, H.-J., Wang, J., Xu, G., Tang, P., Duan, W., & Zhang, S.-C.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2013-09-24
- Volume
- 111
- Issue
- 13
- Pages
- 136804-136804
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1992856317
- Cited by
- 1,322
- References
- 13
- FWCI
- 61.85
- Type
- journal article
- Language
- en
- Open access
- green
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