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The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.

Strain-Induced Gap Modification in Black Phosphorus

Open access
Rodin, A. S., Carvalho, A., Castro Neto, A. H.·2014·Physical Review Letters

Abstract

The band structure of single-layer black phosphorus and the effect of strain are predicted using density functional theory and tight-binding models. Having determined the localized orbital composition of the individual bands from first principles, we use the system symmetry to write down the effective low-energy Hamiltonian at the Γ point. From numerical calculations and arguments based on the crystal structure of the material, we show that the deformation in the direction normal to the plane can be used to change the gap size and induce a semiconductor-metal transition.

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Metadata

Authors
Rodin, A. S., Carvalho, A., & Castro Neto, A. H.
Venue
Physical Review Letters
Published
2014-05-01
Volume
112
Issue
17
Pages
176801-176801
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2033399478
Cited by
1,523
References
5
FWCI
86.37
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Strain-Induced Gap Modification in Black Phosphorus. https://app.cochat.ai/papers/10.1103/physrevlett.112.176801
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Rodin, A. S., Carvalho, A., & Castro Neto, A. H. (2014). Strain-Induced Gap Modification in Black Phosphorus. Physical Review Letters. https://doi.org/10.1103/physrevlett.112.176801

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.