Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems

Abstract

Recently, phosphorene, a monolayer honeycomb structure of black phosphorus, was experimentally manufactured and has attracted rapidly growing interest. Motivated by phosphorene, here we investigate the stability and electronic properties of the honeycomb structure of the arsenic system based on first-principles calculations. Two types of honeycomb structures, buckled and puckered, are found to be stable. We call them arsenenes, as in the case of phosphorene. We find that both buckled and puckered arsenenes possess indirect gaps. We show that the band gap of puckered and buckled arsenenes can be tuned by applying strain. The gap closing occurs at 6% strain for puckered arsenene, where the bond angles between the nearest neighbors become nearly equal. An indirect-to-direct gap transition occurs by applying strain. Specifically, 1% strain is enough to transform puckered arsenene into a direct-gap semiconductor. We note that a bulk form of arsenic called gray arsenic exists which can be used as a precursor for buckled arsenene. Our results will pave the way for applications to light-emitting diodes and solar cells.